There is provided film-forming composition having favorable effects such as curability and embeddability and resist underlayer film for use in lithography process for semiconductor devices.
A film-forming composition comprising, as silane, hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, wherein hydrolyzable silane includes hydrolyzable silane of Formula (1):
R1aR2bSi(R3)4-(a+b) Formula (1)
in Formula (1), R1 is organic group of Formula (2) and is bonded to silicon atom through Si-C bond:
Film-forming composition, wherein the hydrolyzable silane is combination of hydrolyzable silane of Formula (1) with another hydrolyzable silane, wherein other hydrolyzable silane is at least one selected from group consisting of hydrolyzable silane of Formula (3):
R7cSi(R8)4-c Formula (3)
and hydrolyzable silane of Formula (4):
(R9dSi(R10)3-d]2Ye Formula (4)
Resist underlayer film, obtained by applying the resist underlayer film-forming composition on semiconductor substrate and baking.
本发明提供的成膜组合物具有良好的效果,如固化性和嵌入性以及用于半导体器件光刻工艺的抗蚀底层膜。
一种成膜组合物,包括作为
硅烷的可
水解
硅烷、其
水解产物或其
水解缩合产物,其中可
水解
硅烷包括式(1)的可
水解
硅烷:
R1aR2bSi(R3)4-(a+b) 式(1)
在式(1)中,R1 是式(2)的有机基团,并通过 Si-C 键与
硅原子结合:
成膜组合物,其中可
水解
硅烷是式(1)的可
水解
硅烷与另一种可
水解
硅烷的组合,其中另一种可
水解
硅烷至少是从式(3)的可
水解
硅烷组成的组中选出的一种:
R7cSi(R8)4-c 式(3)
和式 (4) 的可
水解
硅烷:
(R9dSi(R10)3-d]2Ye 式(4)
将抗蚀剂底层成膜组合物涂在半导体衬底上并烘烤而得到的抗蚀剂底层薄膜。