[Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed.
[Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.
[问题]提供了一种能够提高量子效率和响应速度的光电转换装置和成像设备。
[解决方法]根据本公开的一个实施例,第一光电转换器件包括第一电极、与第一电极相对的第二电极和光电转换层。光电转换层设置在第一电极和第二电极之间,包括至少一种具有结晶性的有机半导体材料。光电转换层中
水平方向晶体和垂直方向晶体的比例变化在第一温度下有机半导体材料成膜和第二温度下有机半导体材料成膜的情况之间为三倍或更小。第二温度高于第一温度。