1,3,7,9-Tetrafluoroindeno[1,2-b]fluorene-6,12-dione | 1332361-43-9

• 分子结构分类: 有机化合物 - 有机卤素化合物 - 芳基卤化物
• 英文名称: 1,3,7,9-Tetrafluoroindeno[1,2-b]fluorene-6,12-dione
• 英文别名: 1,3,7,9-tetrafluoroindeno[1,2-b]fluorene-6,12-dione
• CAS: 1332361-43-9
• 化学式: C₂₀H₆F₄O₂
• 分子量: 354.26
• InChiKey: RKDOSEZTTQDVCN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.6
• 重原子数：
  26
• 可旋转键数：
  0
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  34.1
• 氢给体数：
  0
• 氢受体数：
  6

反应信息

• 作为产物：
  描述：

  2,5-二溴-1,4-二甲基苯 在 吡啶 、 potassium permanganate 、 硫酸 、 水 、 叔丁基锂 、 palladium diacetate 、 potassium carbonate 、 三环己基膦 作用下， 以 四氢呋喃 、 水 、 甲苯 为溶剂， 反应 19.0h， 生成 1,3,7,9-Tetrafluoroindeno[1,2-b]fluorene-6,12-dione
  参考文献：
  名称：

  High-Performance Stable n-Type Indenofluorenedione Field-Effect Transistors

  摘要：

  We developed high-performance stable n-type organic field-effect transistors (OFETs) using indenofluorenediones with different numbers of fluorine substituents (MonoF-IF-dione, DiF-IF-dione, and TriF-IF-dione). Top-contact OFETs were fabricated via the vacuum deposition of indenofluorenediones as the semiconducting channel material on polystyrene-treated SiO2/Si substrates. TriF-IF-dione FETs with Au source/drain contacts exhibited good device performances, with a field-effect mobility of 0.16 cm(2)/(V s), an on/off current ratio of 10(6), and a threshold voltage of 9.2 V. We found that the electrical stability for OFETs based on indenofluorenedione improved with the number of fluorine substituents, which was attributed to higher activation energies for charge trap creation. Moreover, the TriF-IF-dione FETs yielded excellent environmental stability properties, because the LUMO energy levels were relatively low, compared with those of the MonoF-IF-dione FETs.

  DOI：

  10.1021/cm2016824

文献信息

• High-Performance Stable <i>n</i>-Type Indenofluorenedione Field-Effect Transistors
  作者：Young-Il Park、Joong Suk Lee、Beom Joon Kim、Beomjin Kim、Jaehyun Lee、Do Hwan Kim、Se-Young Oh、Jeong Ho Cho、Jong-Wook Park

  DOI：10.1021/cm2016824

  日期：2011.9.13

  We developed high-performance stable n-type organic field-effect transistors (OFETs) using indenofluorenediones with different numbers of fluorine substituents (MonoF-IF-dione, DiF-IF-dione, and TriF-IF-dione). Top-contact OFETs were fabricated via the vacuum deposition of indenofluorenediones as the semiconducting channel material on polystyrene-treated SiO2/Si substrates. TriF-IF-dione FETs with Au source/drain contacts exhibited good device performances, with a field-effect mobility of 0.16 cm(2)/(V s), an on/off current ratio of 10(6), and a threshold voltage of 9.2 V. We found that the electrical stability for OFETs based on indenofluorenedione improved with the number of fluorine substituents, which was attributed to higher activation energies for charge trap creation. Moreover, the TriF-IF-dione FETs yielded excellent environmental stability properties, because the LUMO energy levels were relatively low, compared with those of the MonoF-IF-dione FETs.