(+/-)-N-cyclobutyl-2-(2-(2-methoxy-4-morpholinophenylamino)-7-(4-methoxybenzyl)-5-methyl-6,7-dihydro-5H-pyrrolo[2,3-d]pyrimidin-4-ylamino)benzenesulfonamide | 1312163-88-4

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 恶嗪烷类
• 英文名称: (+/-)-N-cyclobutyl-2-(2-(2-methoxy-4-morpholinophenylamino)-7-(4-methoxybenzyl)-5-methyl-6,7-dihydro-5H-pyrrolo[2,3-d]pyrimidin-4-ylamino)benzenesulfonamide
• 英文别名: N-cyclobutyl-2-[[2-(2-methoxy-4-morpholin-4-ylanilino)-7-[(4-methoxyphenyl)methyl]-5-methyl-5,6-dihydropyrrolo[2,3-d]pyrimidin-4-yl]amino]benzenesulfonamide
• CAS: 1312163-88-4
• 化学式: C₃₆H₄₃N₇O₅S
• 分子量: 685.847
• InChiKey: FANCCKJZCKFYGC-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.4
• 重原子数：
  49
• 可旋转键数：
  12
• 环数：
  7.0
• sp3杂化的碳原子比例：
  0.39
• 拓扑面积：
  139
• 氢给体数：
  3
• 氢受体数：
  12

文献信息

• 2,4-DIAMINO-6,7-DIHYDRO-5H-PYRROLO[2,3]PYRIMIDINE DERIVATIVES AS FAK/Pyk2 INHIBITORS
  申请人：Xiao Dengming

  公开号：US20130281438A1

  公开（公告）日：2013-10-24

  The invention relates to a novel class of 2,4-diamino-6,7-dihydro-5H-pyrrolo[2,3]pyrimidine derivatives as a FAK and/or Pyk2 inhibitor, to a process for their preparation, and to a composition thereof, as well as to use of the compounds for the inhibiting FAK and/or Pyk2 and method for the treatment of a FAK and/or Pyk2 mediated disorder or disease.

  本发明涉及一种新型的2,4-二氨基-6,7-二氢-5H-吡咯[2,3]嘧啶衍生物，作为FAK和/或Pyk2抑制剂，以及它们的制备方法、组合物和化合物用于抑制FAK和/或Pyk2以及治疗FAK和/或Pyk2介导的疾病或疾病的方法。
• Organic electroluminescent element, manufacturing method for same, and light emission method including a thermally activated delayed fluorescent material
  申请人：Sharp Kabushiki Kaisha

  公开号：US10276819B2

  公开（公告）日：2019-04-30

  The organic EL element (10) at least includes, between a first electrode (2) and a second electrode (4), at least one layer of an exciton generating layer (33) which contains at least one type of TADF material as a host material and at least one layer of a fluorescent emission layer (34) which contains at least one type of fluorescent emission material.

  有机电致发光元件（10）在第一电极（2）和第二电极（4）之间至少包括一层激子发生层（33），该层包含至少一种类型的 TADF 材料作为主材料，以及至少一层荧光发射层（34），该层包含至少一种类型的荧光发射材料。
• Display device manufacturing method, and display device
  申请人：Sharp Kabushiki Kaisha

  公开号：US10510807B2

  公开（公告）日：2019-12-17

  In this manufacturing method, in a blue fluorescent light-emitting layer formation step, a blue fluorescent light-emitting layer is formed in both a subpixel and a subpixel; in a green fluorescent light-emitting layer formation step, a green fluorescent light-emitting layer is formed in both the subpixel and a subpixel; and in a red light-emitting layer formation step, a red light-emitting layer is formed in both the subpixel and a subpixel. In at least two of the abovementioned steps, linear vapor deposition is performed using a slit mask having an opening that is provided so as to extend across a plurality of pixels.

  在该制造方法中，在蓝色荧光发光层形成步骤中，在子像素和子像素中形成蓝色荧光发光层；在绿色荧光发光层形成步骤中，在子像素和子像素中形成绿色荧光发光层；在红色发光层形成步骤中，在子像素和子像素中形成红色发光层。在上述步骤中的至少两个步骤中，使用狭缝掩模进行线性气相沉积，狭缝掩模具有一个开口，该开口横跨多个像素。
• Self-light-emissive display device
  申请人：Sharp Kabushiki Kaisha

  公开号：US10541377B2

  公开（公告）日：2020-01-21

  The organic EL element (10) at least includes, between a first electrode (2) and a second electrode (4), at least one layer of an exciton generating layer (33) which contains at least one type of TADF material as a host material and at least one layer of a fluorescent emission layer (34) which contains at least one type of fluorescent emission material.

  有机电致发光元件（10）在第一电极（2）和第二电极（4）之间至少包括一层激子发生层（33），该层包含至少一种类型的 TADF 材料作为主材料，以及至少一层荧光发射层（34），该层包含至少一种类型的荧光发射材料。
• DISPLAY DEVICE MANUFACTURING METHOD, AND DISPLAY DEVICE
  申请人：Sharp Kabushiki Kaisha

  公开号：US20190157360A1

  公开（公告）日：2019-05-23

  In this manufacturing method, in a blue fluorescent light-emitting layer formation step, a blue fluorescent light-emitting layer is formed in both a subpixel and a subpixel; in a green fluorescent light-emitting layer formation step, a green fluorescent light-emitting layer is formed in both the subpixel and a subpixel; and in a red light-emitting layer formation step, a red light-emitting layer is formed in both the subpixel and a subpixel. In at least two of the abovementioned steps, linear vapor deposition is performed using a slit mask having an opening that is provided so as to extend across a plurality of pixels.