Cyclohexanecarboxylic acid 2-ethoxy-ethyl ester | 66736-45-6

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: Cyclohexanecarboxylic acid 2-ethoxy-ethyl ester
• 英文别名: Cyclohexanecarboxylic acid, 2-ethoxyethyl ester；2-ethoxyethyl cyclohexanecarboxylate
• CAS: 66736-45-6
• 化学式: C₁₁H₂₀O₃
• 分子量: 200.278
• InChiKey: AKRUEXYXCUBJLR-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.4
• 重原子数：
  14
• 可旋转键数：
  6
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.91
• 拓扑面积：
  35.5
• 氢给体数：
  0
• 氢受体数：
  3

文献信息

• Resist composition and patterning process
  申请人：Watanabe Satoshi

  公开号：US20100009299A1

  公开（公告）日：2010-01-14

  The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F 2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

  本发明涉及一种抗蚀组合物，例如用于在抗蚀物的基板侧边界面上提供优异图案轮廓的化学增感抗蚀组合物，除了在微细加工的光刻工艺中具有更高的分辨率外，特别是在采用KrF激光、ArF激光、F2激光、超短紫外光、电子束、X射线等作为曝光光源的光刻工艺中；以及利用该抗蚀组合物的图案化工艺。本发明提供一种化学增感抗蚀组合物，其包括一种或多种胺化合物或胺氧化合物（除了那些在芳香环的环结构中不含有胺或胺氧原子的氮原子的化合物），至少具有一个羧基，并且没有氢原子共价键结合到氮原子作为碱性中心。
• Novel photoacid generators, resist compositions, and patterning process
  申请人：Ohsawa Youichi

  公开号：US20080085469A1

  公开（公告）日：2008-04-10

  Photoacid generators generate sulfonic acids of formula (1a) upon exposure to high-energy radiation. RC(═O)R 1 —COOCH(CF 3 )CF 2 SO 3 − H + (1a) R is hydroxyl, alkyl, aryl, hetero-aryl, alkoxy, aryloxy or hetero-aryloxy, R 1 is a divalent organic group which may have a heteroatom (O, N or S) containing substituent, or R 1 may form a cyclic structure with R. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

  光酸发生剂在高能辐射作用下生成式（1a）的磺酸。RC(═O)R1—COOCH(CF3)CF2SO3−H+(1a)中，R为羟基、烷基、芳基、杂芳基、烷氧基、芳氧基或杂芳氧基，R1为可能含有杂原子（O、N或S）取代基的二价有机基团，或R1可与R形成环状结构。这些光酸发生剂与树脂相容，可以控制酸的扩散，因此适用于化学增感抗蚀组合物中的使用。
• Nitrogen-containing organic compound, resist composition and patterning process
  申请人：Watanabe Takeru

  公开号：US20080102405A1

  公开（公告）日：2008-05-01

  A resist composition comprising as a quencher a nitrogen-containing organic compound bearing a nitrogen-containing heterocycle and having a molecular weight of at least 380 exhibits a high resolution and satisfactory mask coverage dependence and is useful in microfabrication using electron beam or deep-UV.

  一种抗蚀组合物包括作为猝灭剂的氮含有机化合物，其含有氮杂环，并且分子量至少为380，具有高分辨率和令人满意的掩膜覆盖度依赖性，并且适用于使用电子束或深紫外光进行微细加工。
• NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS
  申请人：KOBAYASHI Katsuhiro

  公开号：US20070298352A1

  公开（公告）日：2007-12-27

  Sulfonate salts have the formula: HOCH 2 CH 2 CF 2 CF 2 SO 3 − M + wherein M + is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts are effective photoacid generators in chemically amplified resist compositions.

  磺酸盐的化学式为：HOCH2CH2CF2CF2SO3−M+，其中M+是Li、Na、K、铵或四甲基铵离子。从这些盐中衍生的烷基盐、肟磺酸盐和磺酰氧亚胺在化学增强型抗蚀剂组合物中是有效的光酸发生剂。
• Basic compound, resist composition and patterning process
  申请人：——

  公开号：US20040234884A1

  公开（公告）日：2004-11-25

  Resist compositions comprising basic compounds having an imidazole skeleton and a polar functional group have an excellent resolution and an excellent focus margin and are useful in microfabrication using electron beams or deep-UV light.

  包含咪唑骨架和极性官能团的碱性化合物的抗蚀组合物具有优异的分辨率和优异的聚焦余量，并且适用于使用电子束或深紫外光进行微型加工。