Novel copolymers suitable for forming the top layer photoimagable coating in a deep UV, particularly a 193 nm and 248 nm, bilayer resist system providing high resolution photolithography. Chemically amplified photoresist composition and organosilicon moieties suitable for use in the binder resin for photoimagable etching resistant photoresist composition that is suitable as a material for use in ArF and KrF photolithography using the novel copolymers.
适用于在深紫外(尤其是 193 纳米和 248 纳米)双层抗蚀剂体系中形成顶层光致抗蚀涂层的新型共聚物,可提供高分辨率光刻技术。适用于粘合剂
树脂中的
化学放大光刻胶组合物和有机
硅分子,该粘合剂
树脂适用于使用新型共聚物的 ArF 和 KrF 光刻技术。