2-Propylcyclopropane-1-carboxylic acid | 1821758-03-5

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: 2-Propylcyclopropane-1-carboxylic acid
• CAS: 1821758-03-5
• 化学式: C₇H₁₂O₂
• mdl: MFCD16744653
• 分子量: 128.17
• InChiKey: VGXKFXUFNJJDGP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.8
• 重原子数：
  9
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.857
• 拓扑面积：
  37.3
• 氢给体数：
  1
• 氢受体数：
  2

文献信息

• Spiropiperidine beta-secretase inhibitors for the treatment of Alzheimer's disease
  申请人：Coburn A. Craig

  公开号：US20070021454A1

  公开（公告）日：2007-01-25

  The present invention is directed to spiropiperidine compounds of formula (I) and tautomers thereof, which are inhibitors of the beta-secretase enzyme and that are useful in the treatment of diseases in which the beta-secretase enzyme is involved, such as Alzheimer's disease. The invention is also directed to pharmaceutical compositions comprising these compounds and the use of these compounds and compositions in the treatment of such diseases in which the beta-secretase enzyme is involved.

  本发明涉及式（I）及其互变异构体的螺环吡啶化合物，这些化合物是β-分泌酶酶的抑制剂，并且在治疗β-分泌酶酶参与的疾病，如阿尔茨海默病方面是有用的。本发明还涉及包括这些化合物的制药组合物以及在治疗β-分泌酶酶参与的这些疾病中使用这些化合物和组合物的用途。
• QUINOLINES AND AZA-QUINOLINES AS CRTH2 RECEPTOR MODULATORS
  申请人：Boyce Christopher W.

  公开号：US20130296300A1

  公开（公告）日：2013-11-07

  The invention provides certain quinolines and aza-quinolines of the Formula (I), and their pharmaceutically acceptable salts, wherein E, J 1 , J a , J b , R 2 , R 3 , R 22 , R a , R b , R c , R d , X, Y, b, n, and q are as defined herein. The invention also provides pharmaceutical compositions comprising such compounds, and methods of using the compounds for treating diseases or conditions associated with uncontrolled or inappropriate stimulation of CRTH 2 function.

  该发明提供了公式（I）中的某些喹啉和氮杂喹啉，以及它们的药学上可接受的盐，其中E、J1、Ja、Jb、R2、R3、R22、Ra、Rb、Rc、Rd、X、Y、b、n和q的定义如本文所述。该发明还提供了包含这些化合物的制药组合物，以及使用这些化合物治疗与CRTH2功能不受控制或不适当刺激相关的疾病或病症的方法。
• QUINOXALINES AND AZA-QUINOXALINES AS CRTH2 RECEPTOR MODULATORS
  申请人：Boyce Christopher W.

  公开号：US20130303517A1

  公开（公告）日：2013-11-14

  The invention provides certain quinoxalines and aza-quinoxalines of the Formula (I), and their pharmaceutically acceptable salts, wherein J 1 , J 2 , R 1 , R 2 , R 3 , R 22 , R a , R b , R c , R d , X, Y, b, n, and q are as defined herein. The invention also provides pharmaceutical compositions comprising such compounds, and methods of using the compounds for treating diseases or conditions associated with uncontrolled or inappropriate stimulation of CRTH 2 function.

  本发明提供了式（I）的某些喹喔啉和氮杂喹喔啉，以及其药学上可接受的盐，其中J1、J2、R1、R2、R3、R22、Ra、Rb、Rc、Rd、X、Y、b、n和q如本文所定义。本发明还提供了包含这些化合物的制药组合物，并使用这些化合物治疗与CRTH2功能不受控制或不适当刺激相关的疾病或病症的方法。
• THIN FILM FORMATION COMPOSITION FOR LITHOGRAPHY WHICH CONTAINS TITANIUM AND SILICON
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP2735904A1

  公开（公告）日：2014-05-28

  There is provided a thin film forming composition for forming resist underlayer film and the like which are used in the production of a semiconductor device, and a resist upper layer film which efficiently absorbs undesirable UV light with a thin film existing as an upper layer of the EUV resist before the undesirable UV light reaches the EUV resist layer in EUV lithography, an underlayer film (hardmask) for an EUV resist, a reverse material, and an underlayer film for a resist for solvent development. A thin film forming composition that is used together with a resist in a lithography process, comprising a mixture of a titanium compound (A) selected from a group consisting of a compound of Formula (1):         R0aTi(R1)(4-a)     Formula (1) a titanium chelate compound, and a hydrolyzable titanium dimer, and a silicon compound (B) of Formula (2):         R2a'R3bSi(R4)4-(a'+b)     Formula (2) a hydrolysis product of the mixture, or a hydrolysis-condensation product of the mixture, wherein the number of moles of a Ti atom is 50% to 90% relative to the number of total moles in terms of a Ti atom and a Si atom in the composition.

  本发明提供了一种薄膜形成组合物，用于形成半导体器件生产中使用的抗蚀剂下层膜等，以及一种抗蚀剂上层膜，该抗蚀剂上层膜在极紫外光刻中，在不希望的紫外光到达极紫外光抗蚀剂层之前，作为极紫外光抗蚀剂的上层薄膜存在，可有效吸收不希望的紫外光；一种极紫外光抗蚀剂下层膜（硬掩膜），一种反向材料，以及一种用于溶剂显影的抗蚀剂下层膜。一种在光刻工艺中与抗蚀剂一起使用的薄膜成型组合物，包括选自由式（1）化合物组成的组中的钛化合物（A）的混合物： R0aTi(R1)(4-a) 式(1) 一种钛螯合物和一种可水解的钛二聚物，以及一种式（2）的硅化合物（B）： R2a'R3bSi(R4)4-(a'+b) 式(2) 混合物的水解产物，或混合物的水解缩合产物，其中钛原子的摩尔数相对于组合物中钛原子和硅原子的总摩尔数为 50%至 90%。
• Mask blank, method for manufacturing mask blank and transfer mask
  申请人：HOYA CORPORATION

  公开号：US10042247B2

  公开（公告）日：2018-08-07

  There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.

  本发明提供了一种掩膜坯料，其基板上包括：用于形成转印图案的薄膜；形成在薄膜上的抗蚀剂底层，由抗蚀剂底层组合物制成，该抗蚀剂底层组合物含有具有内酯环的单元结构和具有羟基的单元结构的聚合物；形成在抗蚀剂底层薄膜上的抗蚀剂薄膜，由抗蚀剂组合物制成；以及形成在抗蚀剂底层薄膜和抗蚀剂薄膜之间的混合薄膜，由含有抗蚀剂底层组合物和抗蚀剂组合物的混合成分制成。