[2-(Trifluoromethyl)-2-bicyclo[2.2.1]hept-5-enyl] acetate | 406702-03-2

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: [2-(Trifluoromethyl)-2-bicyclo[2.2.1]hept-5-enyl] acetate
• CAS: 406702-03-2
• 化学式: C₁₀H₁₁F₃O₂
• 分子量: 220.191
• InChiKey: IKTWDONJQRAFHP-UHFFFAOYSA-N

物化性质

• 沸点：
  196.8±40.0 °C(Predicted)
• 密度：
  1.28±0.1 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  2.3
• 重原子数：
  15
• 可旋转键数：
  2
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.7
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  5

反应信息

• 作为产物：
  描述：

  乙酸1-(三氟甲基)乙烯酯 、 环戊二烯 反应 48.0h， 以35.3%的产率得到[2-(Trifluoromethyl)-2-bicyclo[2.2.1]hept-5-enyl] acetate
  参考文献：
  名称：

  Polymerizable compound, polymer, positive-resist composition, and patterning process using the same

  摘要：

  本发明提供了一种聚合物，其中至少具有一个或多个由下列通式（1a）表示的重复单元、一个由下列通式（2a）表示的重复单元、一个由下列通式（3b）表示的重复单元和一个由下列通式（1c）表示的重复单元，以及一种含有该聚合物作为基础树脂的正性光刻胶组合物。因此，可以提供一种在高能束照射下具有高灵敏度和高分辨率的正性光刻胶组合物，由于开发时膨胀被抑制，因此线边粗糙度小，开发后残留物少。

  公开号：

  US07332616B2

文献信息

• POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION
  申请人：JSR Corporation

  公开号：EP1398339A1

  公开（公告）日：2004-03-17

  A novel polysiloxane having high transparency to radiations with a wavelength of 193 nm or less, particularly 157 nm or less, and exhibiting superior dry etching resistance and a radiation-sensitive resin composition comprising the polysiloxane exhibiting superior sensitivity, resolution, and the like are provided. The polysiloxane is a resin having the structural unit (I) and/or structural unit (II) of the following formula (1), and having an acid-dissociable group, wherein R1 represents a monovalent aromatic group substituted with a fluorine atom or a fluoroalkyl group or a monovalent aliphatic group substituted with a fluorine atom or a fluoroalkyl group and R2 represents the above a monovalent aromatic group, the above monovalent aliphatic group, a hydrogen atom, a monovalent hydrocarbon group, haloalkyl group, or amino group. The radiation-sensitive resin composition (A) comprises the polysiloxane (A) and the photoacid generator (B) .

  本发明提供了一种新型聚硅氧烷，该聚硅氧烷对波长为 193 纳米或以下，特别是 157 纳米或以下的辐射具有高透明度，并具有优异的耐干蚀刻性，还提供了一种包含该聚硅氧烷的辐射敏感树脂组合物，该组合物具有优异的灵敏度、分辨率等。该聚硅氧烷是一种具有下式（1）的结构单元（I）和/或结构单元（II），并具有酸可分解基团的树脂、 其中，R1 代表被氟原子或氟烷基取代的一价芳香族基团或被氟原子或氟烷基取代的一价脂肪族基团，R2 代表上述一价芳香族基团、上述一价脂肪族基团、氢原子、一价烃基、卤代烷基或氨基。辐射敏感树脂组合物（A）包括聚硅氧烷（A）和光酸发生器（B）。
• Polysiloxane, process for production thereof and radiation-sensitive resin composition
  申请人：——

  公开号：US20040143082A1

  公开（公告）日：2004-07-22

  A novel polysiloxane having high transparency to radiations with a wavelength of 193 nm or less, particularly 157 nm or less, and exhibiting superior dry etching resistance and a radiation-sensitive resin composition comprising the polysiloxane exhibiting superior sensitivity, resolution, and the like are provided. The polysiloxane is a resin having the structural unit (I) and/or structural unit (II) of the following formula (1), and having an acid-dissociable group, 1 wherein R 1 represents a monovalent aromatic group substituted with a fluorine atom or a fluoroalkyl group or a monovalent aliphatic group substituted with a fluorine atom or a fluoroalkyl group and R 2 represents the above a monovalent aromatic group, the above monovalent aliphatic group, a hydrogen atom, a monovalent hydrocarbon group, haloalkyl group, or amino group. The radiation-sensitive resin composition (A) comprises the polysiloxane (A) and the photoacid generator (B)

  本发明提供了一种新型聚硅氧烷，该聚硅氧烷对波长为 193 纳米或以下，特别是 157 纳米或以下的辐射具有高透明度，并具有优异的耐干蚀刻性，还提供了一种包含该聚硅氧烷的辐射敏感树脂组合物，该组合物具有优异的灵敏度、分辨率等。该聚硅氧烷是一种具有下式（1）的结构单元（I）和/或结构单元（II），并具有可酸解基团的树脂、 1 其中 R 1 代表被氟原子或氟烷基取代的一价芳香族基团或被氟原子或氟烷基取代的一价脂 族基团，R 2 代表上述一价芳香族基团、上述一价脂肪族基团、氢原子、一价烃基、卤代烷基或氨基。辐射敏感树脂组合物 (A) 包括聚硅氧烷 (A) 和光酸发生器 (B)
• NOVEL POLYMERIZABLE COMPOUND, POLYMER, POSITIVE-RESIST COMPOSITION, AND PATTERNING PROCESS USING THE SAME
  申请人：Hatakeyama Jun

  公开号：US20070185226A1

  公开（公告）日：2007-08-09

  The present invention provides a polymer which has at least one or more of a repeating unit represented by a following general formula (1 a ), a repeating unit represented by a following general formula (2 a ) and a repeating unit represented by a following general formula (3 b ), and a repeating unit represented by a following general formula (1 c ), and a positive resist composition which contains as a base resin the polymer. Thereby, there can be provided a positive-resist composition having high sensitivity and high resolution in exposure with a high energy beam, wherein line edge roughness is small since swelling at the time of development is suppressed, and the residue after development is few.
• US7108955B2
  申请人：——

  公开号：US7108955B2

  公开（公告）日：2006-09-19
• US7232641B2
  申请人：——

  公开号：US7232641B2

  公开（公告）日：2007-06-19