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Dimethyl(2-phenoxyethyl)sulfonium | 28525-16-8

中文名称
——
中文别名
——
英文名称
Dimethyl(2-phenoxyethyl)sulfonium
英文别名
dimethyl(2-phenoxyethyl)sulfanium
Dimethyl(2-phenoxyethyl)sulfonium化学式
CAS
28525-16-8
化学式
C10H15OS+
mdl
——
分子量
183.29
InChiKey
VEHIKDSILUQLKT-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    2.5
  • 重原子数:
    12
  • 可旋转键数:
    4
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.4
  • 拓扑面积:
    10.2
  • 氢给体数:
    0
  • 氢受体数:
    1

文献信息

  • COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION
    申请人:Ebata Takuma
    公开号:US20100221659A1
    公开(公告)日:2010-09-02
    A compound has a partial structure shown by a following formula (1), wherein R 1 represents a hydrogen atom or a substituted or unsubstituted hydrocarbon group having 1 to 8 carbon atoms, R 2 represents a substituted or unsubstituted hydrocarbon group having 1 to 8 carbon atoms, Rf represents a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms, L represents an integer from 0 to 4, n represents an integer from 0 to 10, and m represents an integer from 1 to 4.
    以下是化合物的部分结构式(1),其中R1代表氢原子或具有1至8个碳原子的取代或未取代的碳氢基团,R2代表具有1至8个碳原子的取代或未取代的碳氢基团,Rf代表原子或具有1至4个碳原子的全氟烷基团,L表示从0到4的整数,n表示从0到10的整数,m表示从1到4的整数。
  • Acid generators, sulfonic acids, sulfonyl halides, and radiation sensitive resin compositions
    申请人:Ebata Satoshi
    公开号:US20070054214A1
    公开(公告)日:2007-03-08
    The invention provides novel acid generators which are unproblematic in combustibility and accumulation inside the human body and can generate acids having high acidities and high boiling points and exhibiting properly short diffusion lengths in resist coating films and which permit the formation of resist patterns excellent smoothness with little dependence on the denseness of a mask pattern; sulfonic acids generated from the acid generators; sulfonyl halides useful as raw material in the synthesis of the acid generators; and radiation-sensitive resin compositions containing the acid generators. The acid generators have structures represented by the general formula (I), wherein R 1 is a monovalent substituent such as alkoxycarbonyl, alkylsulfonyl, or alkoxysulfonyl, R 2 to R 4 are each hydrogen or alkyl; k is an integer of 0 or above; and n is an integer of 0 to 5. Among the radiation-sensitive resin compositions, a positive one contains a resin having acid-dissociable groups in addition to the above acid generator, while a negative one contains an alkali-soluble resin and a crosslinking agent in addition to the acid generator.
  • Novel Compound, Polymer, and Radiation-Sensitive Composition
    申请人:Nagai Tomoki
    公开号:US20090069521A1
    公开(公告)日:2009-03-12
    A radiation-sensitive resin composition is provided which has high transparency to radiation, excelling in basic properties as a resist such as sensitivity, resolution, and pattern shape, and, in particular, a high resolution radiation-sensitive resin composition providing a wide DOF and excelling in LER. Also provided are a polymer which can be used in the composition and a novel compound useful for synthesizing the polymer. The novel compound is shown by the following formula (2), wherein R 4 represents a methyl group, a trifluoromethyl group, or a hydrogen atom, at least one of the R f s represents a fluorine atom or a linear or branched perfluoroalkyl group having 1 to 10 carbon atoms, A represents a divalent organic group or a single bond, G represents a divalent organic group having a fluorine atom or a single bond, M m+ represents a metal ion or an onium cation, m represents an integer of 1 to 3, and p is an integer of 1 to 8.
  • RADIATION SENSITIVE RESIN COMPOSITION AND POLYMER
    申请人:Sakakibara Hirokazu
    公开号:US20100255420A1
    公开(公告)日:2010-10-07
    A radiation-sensitive resin composition includes a polymer, an acid-labile group-containing resin, a radiation-sensitive acid generator, and a solvent, the polymer including repeating units shown by following general formulas (1) and (2). wherein R 1 and R 2 represent a hydrogen atom, a methyl group, or a trifluoromethyl group, R 3 represents a linear or branched alkyl group having 1 to 6 carbon atoms or an alicyclic hydrocarbon group having 4 to 20 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom, or a derivative thereof, and Z represents a group that includes a group that generates an acid upon exposure to light. The radiation-sensitive resin composition produces an excellent pattern shape, reduces the amount of elution into an immersion liquid upon contact during liquid immersion lithography, ensures that a high receding contact angle is formed by a resist film and an immersion liquid, and rarely causes development defects.
  • COMPOUND
    申请人:Nagai Tomoki
    公开号:US20100324329A1
    公开(公告)日:2010-12-23
    A compound is shown by the following formula (5) in which at least one of R f groups represents a fluorine atom or a linear or branched perfluoroalkyl group having 1 to 10 carbon atoms, A′ represents a substituted or unsubstituted, linear or branched alkylene group having 1 to 20 carbon atoms, an alkylene group having at least one hetero atom, or a single bond, G represents a divalent organic group having a fluorine atom or a single bond, M m+ represents an onium cation, m represents a natural number of 1 to 3, and p represents a natural number of 1 to 8.
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