Mass spectrometric evidence for Pπdπ bonding between sulfur and the group IVB elements
作者:G. Distefano、A. Ricci、R. Danieli、A. Foffani、G. Innorta、S. Torroni
DOI:10.1016/s0022-328x(00)91271-3
日期:1974.1
Comparison of the ionization energies of C6H5SX(CH3)3 (X = C, Si, Ge, Sn and Pb) with those of X(CH3)4 compounds, shows that the absolute values are lower and in a narrower range in the former series; in addition, the carbon derivative does not follow the trend observed for the other compounds. pπdπ bonding between S and X (X = Si, Ge, Sn and Pb) is invoked to explain the results. This proposal is
C 6 H 5 SX(CH 3)3(X = C,Si,Ge,Sn和Pb)与X(CH 3)4化合物的电离能的比较表明,绝对值较低,并且在前一个系列的范围更窄;此外,碳衍生物没有遵循其他化合物的趋势。p π d π S和X(X =的Si,Ge,Sn和Pb)的之间的结合被调用来解释结果。该提议还与这些化合物中的SX键能以及S [X(CH 3)3 ] 2系列的电离能一致。(X = C,Si,Ge和Sn),并且具有化合物C 6 H 5 SSi(CH 3)3,C 6 H 5 SSi(CH 3)2 Cl和C 6 H 5的电离能和键离解能碳化硅3。