Brønsted Acid-Assisted Zinc-Catalyzed Markovnikov-Type Hydrothiolation of Alkenes Using Thiols
作者:Nobukazu Taniguchi
DOI:10.1021/acs.joc.0c00487
日期:2020.5.15
hydrothiolation of alkenes with thiols was achieved in the presence of 4-toluenesulfonic acid. Through this procedure, Markovnikov-type sulfides were synthesized in excellent yields, and the formation of anti-Markovnikov-type sulfides was suppressed. Furthermore, the combination of numerous aryl alkenes with arenethiols or alkyl thiols was achieved using the procedure.
One-Pot Copper-Catalysed Thioetherification of Aryl Halides Using Alcohols and Lawesson's Reagent in Diglyme
作者:Mohammad Gholinejad
DOI:10.1002/ejoc.201500256
日期:2015.7
A new protocol for the thioetherification of structurally varied alcohols with arylhalidesusingLawesson'sreagent, catalysed by copper(I) iodide, and usingdiglyme as a safe solvent was developed. Using this method, the reactions of arylhalides proceeded efficiently, and the desired sulfides were obtained in high to excellent yields. The method usesalcohols as starting materials, which is a significant
Shabarov, Yu. S.; Saginova, L. G.; Veselovskaya, S. V., Journal of Organic Chemistry USSR (English Translation), 1986, vol. 22, p. 685 - 689
作者:Shabarov, Yu. S.、Saginova, L. G.、Veselovskaya, S. V.
DOI:——
日期:——
SHABAROV, YU. S.;SAGINOVA, L. G.;VESELOVSKAYA, S. V., ZH. ORGAN. XIMII, 1986, 22, N 4, 768-772
作者:SHABAROV, YU. S.、SAGINOVA, L. G.、VESELOVSKAYA, S. V.
DOI:——
日期:——
ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
申请人:FUJIFILM CORPORATION
公开号:US20150086912A1
公开(公告)日:2015-03-26
There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit (A) represented by the specific formula (I) capable of generating an acid on the side chain of the resin upon irradiation with an actinic ray or radiation, and a resist film formed with the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising: exposing the resist film, and developing the exposed resist film, and a method for manufacturing a semiconductor device, containing the pattern forming method, and a semiconductor device manufactured by the manufacturing method of the semiconductor device.