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p-methoxyphenyl neopentyl ether | 14225-17-3

中文名称
——
中文别名
——
英文名称
p-methoxyphenyl neopentyl ether
英文别名
Methyl-neopentyl-hydrochinonether;Neopentyl-(p-methoxy-phenyl)-ether;1-(2,2-Dimethylpropoxy)-4-methoxybenzene
p-methoxyphenyl neopentyl ether化学式
CAS
14225-17-3
化学式
C12H18O2
mdl
——
分子量
194.274
InChiKey
DKEQJZVOTGPNPL-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 熔点:
    60 °C(Solv: ethanol (64-17-5); water (7732-18-5))
  • 沸点:
    264.8±13.0 °C(Predicted)
  • 密度:
    0.954±0.06 g/cm3(Predicted)

计算性质

  • 辛醇/水分配系数(LogP):
    3.6
  • 重原子数:
    14
  • 可旋转键数:
    4
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.5
  • 拓扑面积:
    18.5
  • 氢给体数:
    0
  • 氢受体数:
    2

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

点击查看最新优质反应信息

文献信息

  • Preparation of alkyl-aryl ethers and thioethers
    作者:Ian M. Downie、Harry Heaney、Graham Kemp
    DOI:10.1016/s0040-4020(01)81713-0
    日期:1988.1
    involves no molecular rearrangement, and which is also stereospecific, for the preparation of alkyl-aryl ethers and thioethers is described. Stable alkoxyphosphonium salts, R-O-P(NMe2)3 PF6-, have been prepared and treated with phenols and thiophenols, under basic conditions, to yield the corresponding alkyl-aryl ethers and thioethers respectively.
    描述了一种不涉及分子重排并且也是立体定向的用于制备烷基-芳基醚和硫醚的方法。已经制备了稳定的烷氧基phosph盐ROP(NMe 2)3 PF 6-,并在碱性条件下用苯酚和硫酚处理,分别得到相应的烷基-芳基醚和硫醚。
  • 10A-AZALIDE COMPOUND CROSSLINKED AT 10A- AND 12-POSITIONS
    申请人:Sugimoto Tomohiro
    公开号:US20110237784A1
    公开(公告)日:2011-09-29
    A novel 10a-azalide compound crosslinked at the 10a- and 12-positions, which is represented by the following formula, and is effective on even Hemophilus influenzae , or erythromycin resistant bacteria (e.g., resistant pneumococci and streptococci).
    一种新型的10a-azalide化合物,其在10a-和12-位置交联,化学式如下,并且对于Hemophilus influenzae,或者对红霉素产生耐药性的细菌(例如耐药性肺炎球菌和链球菌)具有有效性。
  • DOWNIE, IAN M.;HEANEY, HARRY;KEMP, GRAHAM, TETRAHEDRON, 44,(1988) N 9, 2619-2624
    作者:DOWNIE, IAN M.、HEANEY, HARRY、KEMP, GRAHAM
    DOI:——
    日期:——
  • SYNTHESIS OF NOVEL XYLOSIDES AND POTENTIAL USES THEREOF
    申请人:Balagurunathan Kuberan
    公开号:US20100143980A1
    公开(公告)日:2010-06-10
    The present invention includes a xyloside for use in inducing synthesis of a glycosaminoglycan in a cell, the xyloside having a chemical structure of one of Formula (1), Formula (2), Formula (3), Formula (4), Formula (5), Formula (6), Formula (7), Formula (8), Formula (9), or Formula (10) as shown herein. Also, the present invention includes a method of making a xyloside for use in inducing synthesis of a glycosaminoglycan in a cell, wherein the method is performed with “Click” chemistry. Additionally, the present invention includes a method of administering a xyloside so as to induce synthesis of a glycosaminoglycan in a cell.
  • SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING PHENYL GROUP-CONTAINING CHROMOPHORE
    申请人:NISSAN CHEMICAL INDUSTRIES, LTD.
    公开号:US20170146906A1
    公开(公告)日:2017-05-25
    The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs K.& laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1): R 1 a R 2 b Si(R 3 ) 4−(a+b) Formula (1) [where R 1 is an organic group of Formula (2): and is bonded to a silicon atom through a Si−C bond; R 3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane. A resist underlayer film obtained by applying the resist underlayer film-forming composition onto a semiconductor substrate and baking it.
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