Butadien-tetracarbonsaeure-(1,2,3,4) | 78130-10-6

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: Butadien-tetracarbonsaeure-(1,2,3,4)
• 英文别名: Buta-diene 1,2,3,4-tetracarboxylic acid；buta-1,3-diene-1,2,3,4-tetracarboxylic acid
• CAS: 78130-10-6
• 化学式: C₈H₆O₈
• 分子量: 230.131
• InChiKey: RMGJBHYVRQUMMZ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.2
• 重原子数：
  16
• 可旋转键数：
  5
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  149
• 氢给体数：
  4
• 氢受体数：
  8

文献信息

• PHOTORESIST COMPOSITION, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING RESIST PATTERN
  申请人：JSR Corporation

  公开号：EP3229075A1

  公开（公告）日：2017-10-11

  According to an aspect of the invention, a photoresist composition comprises: a radiation-sensitive acid generator that is capable of generating an acid upon irradiation with a radioactive ray, an action of the acid allowing a solubility in a developer solution to be altered; first particles comprising a metal element and having a hydrodynamic radius as determined by a dynamic light scattering analysis being no greater than 20 nm; and a first solvent. The photoresist composition may comprise a first compound comprising an acid-labile group. The radiation-sensitive acid generator may be the first compound comprising a group that is capable of generating an acid upon exposure to a radioactive ray.

  根据本发明的一个方面，一种光刻胶组合物包括：辐射敏感酸发生器，该发生器能够在放射性射线照射时产生一种酸，酸的作用使显影液中的溶解度发生改变；第一颗粒，该颗粒包括金属元素，并且通过动态光散射分析确定其水动力半径不大于 20 纳米；以及第一溶剂。光致抗蚀剂组合物可包括由可酸基组成的第一化合物。对辐射敏感的酸发生器可以是第一种化合物，其中包含的基团在受到放射性射线照射时能够生成酸。
• Inorganic film-forming composition for multilayer resist processes, and pattern-forming method
  申请人：JSR CORPORATION

  公开号：US10090163B2

  公开（公告）日：2018-10-02

  An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a β-diketone, a β-keto ester, a β-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4. R1X)n  (1)

  一种用于多层抗蚀剂工艺的无机成膜组合物包括一种配合物，该配合物包括：金属原子；至少一种桥接配体；以及除至少一种桥接配体之外的配体，该配体衍生自羟基酸酯、β-二酮、β-酮酯、β-二羧酸酯或其组合。至少一种桥接配体包括衍生自式（1）所代表化合物的第一桥接配体。第一桥接配体的量不低于桥接配体总量的 50 摩尔%。在式 (1) 中，R1 代表化合价为 n 的有机基团。X代表-OH、-COOH、-NCO或-NHRa，其中Ra代表氢原子或一价有机基团。 R1X)n (1)
• COMPOSITION FOR FILM FORMATION, AND PATTERN-FORMING METHOD
  申请人：JSR CORPORATION

  公开号：US20150284539A1

  公开（公告）日：2015-10-08

  A composition for film formation includes a hydrolysis compound and a solvent composition. The hydrolysis compound is a hydrolysis product of a metal compound including a hydrolyzable group, a hydrolytic condensation product of the metal compound, a condensation product of the metal compound and a compound represented by formula (1), or a combination thereof. The metal compound includes a metal element from group 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 or 13, or a combination thereof. The solvent composition includes an alcohol organic solvent, and a non-alcohol organic solvent that does not include an alcoholic hydroxyl group and that include a group including a hetero atom.
• INORGANIC FILM-FORMING COMPOSITION FOR MULTILAYER RESIST PROCESSES, AND PATTERN-FORMING METHOD
  申请人：JSR CORPORATION

  公开号：US20150364332A1

  公开（公告）日：2015-12-17

  An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a β-diketone, a β-keto ester, a β-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R 1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHR a , wherein R a represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4. R 1 X) n (1)
• PHOTORESIST COMPOSITION, PRODUCTION METHOD OF PHOTORESIST COMPOSITION, AND RESIST PATTERN-FORMING METHOD
  申请人：JSR CORPORATION

  公开号：US20170269476A1

  公开（公告）日：2017-09-21

  A photoresist composition includes a radiation-sensitive acid generator, particles, and a first solvent. The radiation-sensitive acid generator is capable of generating an acid upon irradiation with a radioactive ray, an action of the acid allowing a solubility of a film made from the photoresist composition in a developer solution to be altered. The particles include a metal element and have a hydrodynamic radius as determined by a dynamic light scattering analysis of no greater than 20 nm. The photoresist composition may include an acid-labile compound including an acid-labile group. The radiation-sensitive acid generator may be the acid-labile compound including a group that is capable of generating an acid upon exposure to a radioactive ray.