[ZnCl(Si(SiMe₃)₃)(THF)]₂ | 562810-64-4

• 分子结构分类: 有机化合物
• 英文名称: [ZnCl(Si(SiMe₃)₃)(THF)]₂
• 英文别名: [(Me3Si)3SiZnCl(thf)]2；[tris(trimethylsilyl)silylzinc chloride(tetrahydrofuran)]2；dizinc;oxolane;tris(trimethylsilyl)silanide;dichloride
• CAS: 562810-64-4
• 化学式: C₂₆H₇₀Cl₂O₂Si₈Zn₂
• 分子量: 841.211
• InChiKey: GTNWZYWEMNCMFH-UHFFFAOYSA-L

计算性质

• 辛醇/水分配系数(LogP)：
  3.06
• 重原子数：
  40
• 可旋转键数：
  6
• 环数：
  2.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  18.5
• 氢给体数：
  0
• 氢受体数：
  6

反应信息

• 作为反应物：
  描述：

  [ZnCl(Si(SiMe₃)₃)(THF)]₂ 反应 4.0h， 以96%的产率得到锌
  参考文献：
  名称：

  Reductive Elimination of Hypersilyl Halides from Zinc(II) Complexes. Implications for Electropositive Metal Thin Film Growth

  摘要：

  Treatment of Zn(Si(SiMe3)(3))(2) with ZnX2 (X = Cl, Br, I) in tetrahydrofuran (THF) at 23 degrees C afforded [Zn(Si(SiMe3)(3))X(THF)](2) in 83-99% yield. X-ray crystal structures revealed dimeric structures with Zn2X2 cores. Thermogravimetric analyses of [Zn(Si(SiMe3)(3))X(THF)](2) demonstrated a loss of coordinated THF between 50 and 155 degrees C and then single-step weight losses between 200 and 275 degrees C. The nonvolatile residue was zinc metal in all cases. Bulk thermolyses of [Zn(Si(SiMe3)(3))X(THF)](2) between 210 and 250 degrees C afforded zinc metal in 97-99% yield, Si(SiMe3)(3)X in 91-94% yield, and THF in 81-98% yield. Density functional theory calculations confirmed that zinc formation becomes energetically favorable upon THF loss. Similar reactions are likely to be general for M(SiR3)(n)/MXn pairs and may lead to new metal-film-growth processes for chemical vapor deposition and atomic layer deposition.

  DOI：

  10.1021/ic502184f
• 作为产物：
  描述：

  tris(trimethylsilyl)silyllithium*3(tetrahydrofuran) 、 zinc(II) chloride 以 四氢呋喃 为溶剂， 以81%的产率得到[ZnCl(Si(SiMe₃)₃)(THF)]₂
  参考文献：
  名称：

  Preparation and structural characterization of trimethylsilyl-substituted germylzinc halides, (Me3Si)3GeZnX (X=Cl, Br, and I) and silylzinc chloride, R(Me3Si)2SiZnCl (R=SiMe3 and Ph)

  摘要：

  The trimethylsilyl-substituted germylzine halides, (Me3Si)(3)GeZnX (X = Cl, Br, and 1), and silylzinc chlorides, R(Me3Si)(2)SiZnCl (R = SiMe3, Ph), have been prepared and their molecular structures have been full determined by spectroscopic and single-crystal Xray diffraction methods. The germylzinc halides and silylzinc chlorides have dimeric structures consisting of two mu-halogen atoms. The reactivity of germylzinc chloride with substrates is also examined. (C) 2003 Elsevier Science B.V. All rights reserved.

  DOI：

  10.1016/s0022-328x(03)00148-7

文献信息

• Deposition of metal films based upon complementary reactions
  申请人：WAYNE STATE UNIVERSITY

  公开号：US09540730B2

  公开（公告）日：2017-01-10

  A method comprises contacting a compound having formulae (1) with a compound having formula MLo to form a metal: [M(SiR3)m(L1)p]n  (1) wherein M is Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, a second row transition metal or a third row transition metal; R are each independently H, C1-C6 alkyl or —Si(R″)3; R″ are each independently H or C1-C6 alkyl; m is an integer from 1 to 3; n is a number representing the formation of aggregates or polymeric material; L1 is a neutral donor ligand; L is a ligand; p is an integer from 0 to 6; and o is an integer representing the number of ligands bonded to MLo.

  一种方法包括将具有化学式（1）的化合物与具有化学式MLo的化合物接触，以形成金属：[M(SiR3)m(L1)p]n（1），其中M为Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Al、第二行过渡金属或第三行过渡金属；R分别独立为H、C1-C6烷基或—Si(R″)3；R″分别独立为H或C1-C6烷基；m为1至3的整数；n表示聚集物或聚合材料的形成数量；L1为中性给体配体；L为配体；p为0至6的整数；o表示与MLo结合的配体数的整数。