2-methylbutyl heptanoate | 55195-33-0

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: 2-methylbutyl heptanoate
• 英文别名: heptanoic acid-(2-methyl-butyl ester)；Heptansaeure-(2-methyl-butylester)；(S)-2-methylbutyl heptanoate
• CAS: 55195-33-0
• 化学式: C₁₂H₂₄O₂
• 分子量: 200.321
• InChiKey: NEYFHTHRJVQMPA-UHFFFAOYSA-N

物化性质

• 保留指数：
  1329

计算性质

• 辛醇/水分配系数(LogP)：
  4.3
• 重原子数：
  14
• 可旋转键数：
  9
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.92
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• Topcoat compositions and pattern-forming methods
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US10042259B2

  公开（公告）日：2018-08-07

  Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I): wherein: R1 represents H, F, methyl or fluorinated methyl; R2 represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; R3 represents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; R4 represents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S or NR5, wherein R5 is chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

  面漆组合物包括：基质聚合物；表面活性聚合物，该聚合物由以下通式 (I) 的单体聚合而成： 其中R1 代表 H、F、甲基或氟化甲基； R2 代表任选取代的 C1 至 C8 亚烷基或任选取代的 C1 至 C8 氟亚烷基，任选包含一个或多个杂原子； R3 代表 H、F、任选取代的 C1 至 C10 烷基或任选取代的 C5 至 C15 芳基，任选包含一个或多个杂原子；R4 代表任选取代的 C1 至 C8 烷基、任选取代的 C1 至 C8 氟烷基或任选取代的 C5 至 C15 芳基，任选包含一个或多个杂原子；X 代表 O、S 或 NR5，其中 R5 选自氢和任选取代的 C1 至 C5 烷基；a 为 0 或 1；以及溶剂。本发明还提供了涂层基底和图案形成方法，这些基底和方法都使用了本发明的面漆组合物。本发明特别适用于光刻工艺，作为制造半导体器件的光刻胶面涂层。
• Topcoat compositions containing fluorinated thermal acid generators
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US10241411B2

  公开（公告）日：2019-03-26

  Provided are topcoat compositions that include: a matrix polymer; a surface active polymer; an ionic thermal acid generator comprising an anion and a cation, wherein the anion, the cation, or the anion and the cation are fluorinated; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

  所提供的面漆组合物包括：基质聚合物；表面活性聚合物；由阴离子和阳离子组成的离子热酸发生体，其中阴离子、阳离子或阴离子和阳离子均为氟化；以及溶剂。此外，本发明还提供了涂层基底和图案形成方法，这些基底和方法都使用了本发明的面漆组合物。本发明特别适用于光刻工艺，可用作制造半导体器件的光刻胶面涂层。
• TOPCOAT COMPOSITIONS AND PHOTOLITHOGRAPHIC METHODS
  申请人：The Dow Chemical Company

  公开号：US20150323869A1

  公开（公告）日：2015-11-12

  Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a solvent system that comprises 1) a first organic solvent represented by formula (I), wherein R1 and R2 are alkyl groups of 3-8 carbons and the total number of carbons of R1 and R2 is greater than 6; and 2) a second organic solvent that is a C4 to C10 monovalent alcohol.
• PHOTORESIST TOPCOAT COMPOSITIONS AND METHODS OF PROCESSING PHOTORESIST COMPOSITIONS
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US20160333212A1

  公开（公告）日：2016-11-17

  Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: R 1 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R 2 represents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; L 1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: R 3 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R 4 represents linear, branched or cyclic C1 to C20 alkyl; R 5 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L 2 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.
• TOPCOAT COMPOSITIONS AND PATTERN-FORMING METHODS
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US20180118970A1

  公开（公告）日：2018-05-03

  Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I): wherein: R 1 represents H, F, methyl or fluorinated methyl; R 2 represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; R 3 represents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; R 4 represents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S or NR 5 , wherein R 5 is chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.