2-[2-(2-Methoxyethoxy)ethoxy]ethane-1-sulfonic acid | 917608-80-1

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机磺酸及其衍生物
• 英文名称: 2-[2-(2-Methoxyethoxy)ethoxy]ethane-1-sulfonic acid
• 英文别名: 2-[2-(2-methoxyethoxy)ethoxy]ethanesulfonic acid
• CAS: 917608-80-1
• 化学式: C₇H₁₆O₆S
• 分子量: 228.27
• InChiKey: OSAACKSXIXPCRG-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.3
• 重原子数：
  14
• 可旋转键数：
  9
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  90.4
• 氢给体数：
  1
• 氢受体数：
  6

文献信息

• SILICON-CONTAINING EUV RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING ONIUM SULFONATE
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20150210829A1

  公开（公告）日：2015-07-30

  A resist underlayer film-forming composition for EUV lithography showing good resist shape; including: a hydrolyzable organosilane, a hydrolyzed product thereof, or a hydrolyzed condensate thereof, as a silane; and a salt of a sulfonic acid ion containing a hydrocarbon group with an onium ion. The hydrolyzable organosilane includes at least one organic silicon compound selected from the group consisting of compounds of Formula (1): R 1 a Si(R 2 ) 4−a Formula (1) and compounds of Formula (2): R 3 c Si(R 4 ) 3−c 2 Y b Formula (2) a hydrolyzed product thereof, or a hydrolyzed condensate thereof. A method for manufacturing a semiconductor device, including: forming an organic underlayer film on a semiconductor substrate; a resist underlayer film by applying the resist underlayer film-forming composition onto the organic underlayer film, then baking applied resist underlayer film-forming composition; forming a resist film by applying composition for EUV resists onto resist underlayer film; EUV-exposing the resist film; and obtaining a resist pattern by developing exposed resist film.