The first solution-processable n-type phthalocyaninato copper semiconductor: tuning the semiconducting nature via peripheral electron-withdrawing octyloxycarbonyl substituents
作者:Pan Ma、Jinglan Kan、Yuexing Zhang、Chunhua Hang、Yongzhong Bian、Yanli Chen、Nagao Kobayshi、Jianzhuang Jiang
DOI:10.1039/c1jm13082j
日期:——
A series of unsymmetrical phthalocyaninato copper complexes simultaneously incorporating electron-withdrawing and electron-donating substituents at the phthalocyanine periphery CuPc(15C5)[(COOC8H17)6]} (2), CuPc[(adj-15C5)2][(COOC8H17)4]} (3), CuPc[(opp-15C5)2][(COOC8H17)4]} (4), CuPc(15C5)3[(COOC8H17)2]} (5) were prepared and isolated. For comparative studies, symmetrical analogues including 2,3,9,10,16,17,24,25-octakis(octyloxycarbonyl)phthalocyaninato copper complex Cu[Pc(COOC8H17)8] (1) and 2,3,9,10,16,17,24,25-tetrakis(15-crown-5)phthalocyaninato copper complex Cu[Pc(15C5)4] (6) were also prepared. Their electrochemistry was studied by cyclic voltammetry (CV) and differential pulse voltammetry (DPV). With the help of a solution-based self-assembly process, these compounds were fabricated into organic field effect transistors (OFETs) with top contact configuration on hexamethyldisilazane (HMDS)-treated SiO2/Si substrate. In line with the electrochemical investigation results, a p-type OFET with a carrier mobility (for holes) of 0.06 cm2 V−1 s−1 was shown for Cu[Pc(15C5)4] (6) with electron-donating 15-crown-5 as the sole type of peripheral substituent. In contrast, n-type devices with a carrier mobility (for electrons) of 6.7 × 10−6–1.6 × 10−4 cm2 V−1 s−1 were achieved for 1–5 with electron-withdrawing octyloxycarbonyl substituents at the peripheral positions of phthalocyanine ring, indicating the significant effect of electron-withdrawing octyloxycarbonyl substituents on tuning the nature of phthalocyanine organic semiconductors. The present results represent the first example of solution-processed n-type phthalocyanine-based OFET devices.
一系列不对称的邻苯二甲酰亚胺铜杂化物(phthalocyaninato copper complexes)同时在邻苯二甲酰亚胺周围引入了电子吸引和电子供给取代基,制备并分离了CuPc(15C5)[(COOC8H17)6]} (2)、CuPc[(adj-15C5)2][(COOC8H17)4]} (3)、CuPc[(opp-15C5)2][(COOC8H17)4]} (4)和CuPc(15C5)3[(COOC8H17)2]} (5)。为了进行比较研究,还制备了对称性类似物,包括2,3,9,10,16,17,24,25-八烷氧基羧基邻苯二甲酰亚胺铜杂化物Cu[Pc(COOC8H17)8] (1)和2,3,9,10,16,17,24,25-四烷氧基(15-冠-5)邻苯二甲酰亚胺铜杂化物Cu[Pc(15C5)4] (6)。通过循环伏安法(CV)和差分脉冲伏安法(DPV)研究了它们的电化学性质。借助于基于溶液的自组装过程,这些化合物被构建成在六甲基二硅氮烷(HMDS)处理的SiO2/Si基底上的顶接有机场效应晶体管(OFET)。根据电化学研究的结果,Cu[Pc(15C5)4] (6)表现出以电子供给型15-冠-5作为唯一的外围取代基的p型OFET,孔载流子迁移率为0.06 cm² V⁻¹ s⁻¹。相对而言,1-5的n型器件表现出电子载流子迁移率为6.7 × 10⁻⁶–1.6 × 10⁻⁴ cm² V⁻¹ s⁻¹,其外围位置的邻苯二甲酰亚胺环含有电子吸引的辛烷氧基羧基取代基,表明电子吸引型的辛烷氧基羧基取代基在调节邻苯二甲酰亚胺有机半导体性质方面具有显著影响。目前的结果代表了溶液处理的n型邻苯二甲酰亚胺基OFET器件的第一个例子。