申请人:Bailey, III Wade Hampton
公开号:US20130030191A1
公开(公告)日:2013-01-31
Metal-containing complexes with general formula (1) (R
1
n
Pyr)(R
2
n
Pyr)ML
1
L
2
; or (2) [(R
8
XR
9
)(R
1
n
Pyr)(R
2
n
Pyr)]ML
1
L
2
are disclosed; wherein M is a Group IV metal, Pyr is pyrrolyl ligand, n=1, 2 and 3, L
1
and L
2
are independently selected from alkoxide, amide or alkyl, L
1
and L
2
can be linked together, R
1
and R
2
can be same or different organic groups substituted at 2,3,4-positions of the pyrrole ring and are selected from the group consisting of linear and branched C
1-6
alkyls, Wand R
9
are independently selected from the linear or branched chain alkylene group having 2-6 carbon atoms, and X is CH
2
or oxygen. Methods of using the metal complexes as precursors to deposit metal or metal oxide films used for various devices in semi-conductor industries are also discussed.
揭示了具有一般公式(1)(R1nPyr)(R2nPyr)ML1L2;或(2)[(R8XR9)(R1nPyr)(R2nPyr)]ML1L2的含金属配合物;其中M是IV族金属,Pyr是吡咯配体,n=1、2和3,L1和L2可独立选择自烷氧基、酰胺或烷基,L1和L2可以连接在一起,R1和R2可以是相同或不同的有机基团,在吡咯环的2、3、4位被取代,并且从由线性和支链C1-6烷基组成的组中选择,W和R9可以独立选择具有2-6个碳原子的线性或支链烷基链,X为CH2或氧。还讨论了将金属配合物用作沉积金属或金属氧化物薄膜的前体的方法,用于半导体行业中各种器件。