Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound
申请人:Fujifilm Corporation
公开号:US08110333B2
公开(公告)日:2012-02-07
A resist composition includes (A) a compound represented by the following formula (I):
wherein each of R1 to R13 independently represents a hydrogen atom or a substituent, provided that at least one of R1 to R13 is a substituent containing an alcoholic hydroxyl group; Z represents a single bond or a divalent linking group; and X− represents an anion containing a proton acceptor functional group.
RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND
申请人:KAMIMURA Sou
公开号:US20090042124A1
公开(公告)日:2009-02-12
A resist composition includes (A) a compound represented by the following formula (I):
wherein each of R
1
to R
13
independently represents a hydrogen atom or a substituent, provided that at least one of R
1
to R
13
is a substituent containing an alcoholic hydroxyl group; Z represents a single bond or a divalent linking group; and X
−
represents an anion containing a proton acceptor functional group.