1,3-bis(1',1'-dimethylhydroxymethyl)-5-methoxybenzene | 131000-35-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 1,3-bis(1',1'-dimethylhydroxymethyl)-5-methoxybenzene
• 英文别名: 2-[3-(2-Hydroxypropan-2-yl)-5-methoxyphenyl]propan-2-ol
• CAS: 131000-35-6
• 化学式: C₁₃H₂₀O₃
• 分子量: 224.3
• InChiKey: PPMHRHWAEIDMNF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.3
• 重原子数：
  16
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.54
• 拓扑面积：
  49.7
• 氢给体数：
  2
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  吡咯 、 1,3-bis(1',1'-dimethylhydroxymethyl)-5-methoxybenzene 在 三氟化硼乙醚 作用下， 以 乙腈 为溶剂， 反应 1.0h， 以26%的产率得到trans-calix[2]-5-methoxybenzene[2]pyrrole
  参考文献：
  名称：

  Missing-Link Macrocycles: Hybrid Heterocalixarene Analogues Formed from Several Different Building Blocks

  摘要：

  The synthesis and structural characterization of hybrid heterocalix[4]arene analogues containing pyrrole, benzene, methoxy-substituted benzene, and pyridine subunits is described. Macrocycles I and 2, examples of calix[2]benzene[2]pyrrole and calix[I]benzene[3]pyrrole systems, respectively, are synthesized by the condensation of pyrrole and an appropriate pheny Ibis (carbinol). Macrocycles 3 and 7, examples of calix[2] benzene[ 1]pyridine [ 1]pyrrole and calix[1]pyridine[3]pyrrole, respectively, are synthesized by the use of a carbene-based pyrrole-to-pyridine ring-expansion procedure. Single-crystal X-ray analysis reveals that compounds la, 1b, and 2b adopt 1,3-alternate conformations in the solid state, whereas compounds 3 and 7 display structures that are best described as "flattened partial cones" in terms of their conformation. (Series a refers to pure benzene-derived systems, whereas series b indicates macrocycles containing 5-mothoxyphenyl subunits). In the solid state, the methoxy-functionalized macrocycles I b and 2b, and the chloropyridine-containing macrocycle 7 exist as dimers. In the case of la and 7, these compounds interact with neutral solvent in the solid state. The conformations of the macrocycles in solution were explored by temperature-dependent proton NMR and NOESY spectral analysis. At 188K, macrocycles I a and 2 a adopt flattened 1,3-alternate conformations, whereas macrocycles 3 and 7 exist in the form of flattened partial-cone conformations. Standard proton NMR titration analyses were carried out in the case of macrocycles I a and 2 a, and reveal that at least the second of these systems is capable of binding fluoride and chloride anions in CD,Cl, solution at room temperature (K-a = 571 and 17 M-1 in the case of 2 a and F- and Cl, respectively).

  DOI：

  10.1002/1521-3765(20020301)8:5<1134::aid-chem1134>3.0.co;2-m
• 作为产物：
  描述：

  2,6-二溴苯甲醚 、 丙酮 生成 1,3-bis(1',1'-dimethylhydroxymethyl)-5-methoxybenzene
  参考文献：
  名称：

  锆茂-苯并二炔当量的合成与反应

  摘要：

  已经制备并分离出3-甲氧基-4-[（甲基）锆茂] banzyne 1的锆茂复合物作为其三甲基膦加合物。另外，已经研究了1与各种不饱和有机分子的反应。在这些反应中，1用作双（锆茂）3-甲氧基苯并二炔配合物的合成等价物。

  DOI：

  10.1016/s0040-4039(00)97897-3

文献信息

• Photomask and manufacturing method of an electronic device therewith
  申请人：——

  公开号：US20020086222A1

  公开（公告）日：2002-07-04

  In the step of manufacturing a photomask, an opaque pattern is formed by using a photosensitive resin composition containing a specified light absorbent, which then used to manufacture a photomask for KrF excimer laser lithography in a short manufacturing time and at a reduced cost. Accordingly, the manufacturing time and the cost for semiconductor integrated circuit devices is reduced.

  在制造光掩膜的步骤中，通过使用含有特定光吸收剂的光敏树脂组合物形成不透明图案，然后用它来制造用于 KrF 准分子激光光刻的光掩膜，制造时间短，成本低。因此，半导体集成电路设备的制造时间和成本都得以降低。
• Photo mask
  申请人：——

  公开号：US20030129505A1

  公开（公告）日：2003-07-10

  Providing a photo mask for KrF excimer laser lithography, which can be produced with high accuracy and low defects in a smaller number of steps. A photo mask for KrF excimer laser lithography according to the present invention is one in which a resist pattern 18 efficiently absorbing a KrF excimer laser light (wavelength: about 248 nm) is formed directly on a quartz substrate 10. The resist pattern 18 comprises: an aqueous alkali-soluble resin having a high light shielding property, which incorporates a naphthol structure having at least one hydroxyl group bound to a naphthalene nucleus; or a radiation sensitive resist having, as a main component, an aqueous alkali-soluble resin containing a derivative of the above-mentioned aqueous alkali-soluble resin as a resin matrix.

  提供一种用于 KrF 准分子激光光刻的光掩膜，它可以用较少的步骤生产出高精度和低缺陷的光掩膜。根据本发明，用于 KrF 准分子激光光刻的光掩膜是一种抗蚀剂图案 18 在石英基底上直接形成能有效吸收 KrF 准分子激光（波长：约 248 纳米）的光刻胶图案 18。 10. 抗蚀图案 18 包括：具有高光屏蔽性能的水性碱溶性树脂，其中包含一个萘酚结构，该萘酚结构具有至少一个与萘核结合的羟基；或辐射敏感抗蚀剂，其主要成分为水性碱溶性树脂，其中含有上述水性碱溶性树脂的衍生物作为树脂基体。
• PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK
  申请人：FUJIFILM Corporation

  公开号：US20170121437A1

  公开（公告）日：2017-05-04

  A pattern forming method includes forming a film using an actinic ray-sensitive or radiation-sensitive resin composition, exposing the film with active light or radiation, and developing the exposed film using a developer including an organic solvent, in which the actinic ray-sensitive or radiation-sensitive resin composition contains a compound having a partial structure represented by General Formula (I).
• US6790564B2
  申请人：——

  公开号：US6790564B2

  公开（公告）日：2004-09-14
• US7005216B2
  申请人：——

  公开号：US7005216B2

  公开（公告）日：2006-02-28