Resist composition, compound for use in the resist composition and pattern forming method using the resist composition
申请人:Kawanishi Yasutomo
公开号:US20060194147A1
公开(公告)日:2006-08-31
The invention provides a resist composition for use in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes, a compound for use in the resist composition and a pattern forming method using the resist composition, which are a resist composition comprising (A) a sulfonium salt represented by the following formula (I); and a pattern forming method using the resist composition:
wherein
R
1
represents an alkyl group or an aryl group,
R
2
to R
9
each independently represents a hydrogen atom or a substituent and may combine with each other to form a ring, Z represents an electron-withdrawing divalent linking group,
X
n−
represents an n-valent anion, n represents an integer of 1 to 3, and m represents the number of anions necessary for neutralizing the electric charge.
该发明提供了一种用于半导体(例如IC)、液晶电路基板、热敏头等的制造工艺或其他光刻制造工艺中使用的抗蚀剂组成物,以及用于该抗蚀剂组成物的化合物和图案形成方法。该抗蚀剂组成物包括以下式(I)所表示的磺酸盐(A);以及使用该抗蚀剂组成物的图案形成方法:其中,R1表示烷基或芳基,R2至R9各自独立地表示氢原子或取代基,并且它们可以结合在一起形成环,Z表示电子吸引性双价连接基团,Xn-表示n价阴离子,n表示1至3的整数,m表示中和电荷所需的阴离子数。