Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
申请人:——
公开号:US20030235782A1
公开(公告)日:2003-12-25
The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.
本发明涉及一种新型光刻胶组合物,可以用水性碱性溶液进行显影,并且能够在深紫外曝光波长下成像。该发明还涉及一种成像新型光刻胶的方法以及新型光酸发生剂。