A method of making a nanostructure and nanostructured articles by depositing a layer to a major surface of a substrate by plasma chemical vapor deposition from a gaseous mixture while substantially simultaneously etching the surface with a reactive species. The method includes providing a substrate; mixing a first gaseous species capable of depositing a layer onto the substrate when formed into a plasma, with a second gaseous species capable of etching the substrate when formed into a plasma, thereby forming a gaseous mixture; forming the gaseous mixture into a plasma; and exposing a surface of the substrate to the plasma, wherein the surface is etched and a layer is deposited on at least a portion of the etched surface substantially simultaneously, thereby forming the nanostructure. The substrate can be a (co)polymeric material, an inorganic material, an alloy, a solid solution, or a combination thereof. The deposited layer can include the reaction product of plasma chemical vapor deposition using a reactant gas comprising a compound selected from the group consisting of organosilicon compounds, metal alkyl compounds, metal isopropoxide compounds, metal acetylacetonate compounds, metal halide compounds, and combinations thereof. Nanostructures of high aspect ratio and optionally with random dimensions in at least one dimension and preferably in three orthogonal dimensions can be prepared.
一种制造纳米结构和纳米结构物品的方法,其方法是通过等离子体
化学气相沉积将一层沉积在基底的主要表面上,同时基本上同时用反应物蚀刻表面。该方法包括提供基底;将形成等离子体时能够在基底上沉积层的第一气态物质与形成等离子体时能够蚀刻基底的第二气态物质混合,从而形成气态混合物;将气态混合物形成等离子体;以及将基底的表面暴露于等离子体,其中表面被蚀刻,层基本上同时沉积在蚀刻表面的至少一部分上,从而形成纳米结构。基底可以是(共)聚合物材料、无机材料、合
金、固溶体或它们的组合。沉积层可包括等离子体
化学气相沉积的反应产物,该反应产物使用的反应气体包括选自
有机硅化合物、
金属烷基化合物、
金属异丙氧基化合物、
金属
乙酰丙酮化合物、
金属卤化物化合物及其组合的化合物。可以制备出高宽比的纳米结构,并可选择在至少一个维度上,最好是在三个正交维度上具有无规尺寸。