Hole Injection/Transport Materials Derived from Heck and Sol−Gel Chemistry for Application in Solution-Processed Organic Electronic Devices
作者:Younhee Lim、Young-Seo Park、Yerang Kang、Do Young Jang、Joo Hyun Kim、Jang-Joo Kim、Alan Sellinger、Do Y. Yoon
DOI:10.1021/ja1061517
日期:2011.2.9
the Si atom and the aromatic amine, was prepared under mild conditions via sequential Heck and sol-gel chemistry and used as an alternative to poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), the most widely used planarizing hole injection/transport layer in solution-processed organic electronic devices. Spin-coating TEVS-TPD polymer solutions yield defect-free, uniform, thin films
一种有机硅酸酯聚合物,基于 N,N'-二苯基-N,N'-双(4-((E)-2-(三乙氧基甲硅烷基)乙烯基)苯基)联苯基-4,4'-二胺 (TEVS-TPD),具有Si 原子和芳香胺之间的扩展共轭,在温和条件下通过顺序 Heck 和溶胶-凝胶化学制备,并用作聚(3,4-亚乙基二氧噻吩):聚(苯乙烯磺酸盐)(PEDOT:PSS)的替代品,在溶液加工的有机电子器件中使用最广泛的平面化空穴注入/传输层。旋涂 TEVS-TPD 聚合物溶液产生无缺陷、均匀的薄膜,对 ITO 电极具有优异的附着力。在 180 °C 下热交联后,交联聚合物表现出优异的耐溶剂性和电化学稳定性。