triphenylsulfonium butanesulfonate | 549513-63-5

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: triphenylsulfonium butanesulfonate
• 英文别名: Triphenylsulfanium butane-1-sulfonate；butane-1-sulfonate;triphenylsulfanium
• CAS: 549513-63-5
• 化学式: C₄H₉O₃S*C₁₈H₁₅S
• 分子量: 400.563
• InChiKey: QPXMRCTYZIAUQD-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  5.11
• 重原子数：
  27
• 可旋转键数：
  5
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.18
• 拓扑面积：
  66.6
• 氢给体数：
  0
• 氢受体数：
  3

文献信息

• CYCLIC COMPOUND, PRODUCTION PROCESS THEREOF, RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD
  申请人：Takasuka Masaaki

  公开号：US20120282546A1

  公开（公告）日：2012-11-08

  Disclosed are: a cyclic compound which has high solubility in a safe solvent, is highly sensitive, enables the formation of a resist pattern having a good shape, and rarely causes resist pattern collapse; a process for producing the cyclic compound; a radiation-sensitive composition containing the cyclic compound; and a resist pattern formation method using the composition. Specifically disclosed are: a cyclic compound having a specific structure; a process for producing the cyclic compound; a radiation-sensitive composition containing the compound; and a resist pattern formation method using the composition.

  本发明涉及一种具有高溶解度、高灵敏度、能够形成良好形状的抗蚀图案，且很少引起抗蚀图案崩塌的环状化合物；一种制备该环状化合物的方法；一种含有该环状化合物的辐射敏感组合物；以及使用该组合物的抗蚀图案形成方法。具体揭示了一种具有特定结构的环状化合物，制备该环状化合物的方法，含有该化合物的辐射敏感组合物以及使用该组合物的抗蚀图案形成方法。
• Antireflection film composition, patterning process and substrate using the same
  申请人：Shinetsu Chemical Co., Ltd.

  公开号：EP1798599A1

  公开（公告）日：2007-06-20

  There is disclosed an antireflection film composition for forming an intermediate resist film of a multilayer resist film used in lithography comprising: at least a polymer obtained by reacting a chelating agent with a polymer having a repeating unit represented by the following general formula (1); an organic solvent; and an acid generator. There can be provided a novel antireflection film composition that exhibits high etch selection ratio to a photoresist film, that forms a dense inorganic film, whereby an excellent pattern can be formed on the overlying photoresist film, that can be removed with wet stripping, that exhibits high preservation stability and high dry etching resistance when an underlying layer is etched, and that is suitable for forming an intermediate resist film of a multilayer resist film; a patterning process in which an antireflection film is formed over a substrate by using the antireflection film composition; and a substrate having the antireflection film as an intermediate resist film.

  本发明公开了一种用于形成光刻技术中使用的多层光刻胶膜的中间光刻胶膜的抗反射膜组合物，该组合物包括：至少一种通过螯合剂与具有以下通式(1)所代表的重复单元的聚合物反应而得到的聚合物；一种有机溶剂；以及一种酸发生器。本发明提供了一种新型抗反射膜组合物，该组合物对光刻胶膜具有高蚀刻选择比，可形成致密的无机膜，从而可在上覆的光刻胶膜上形成极佳的图案，该组合物可通过湿法剥离去除，当底层被蚀刻时，该组合物具有高保存稳定性和高抗干蚀刻性，并且适用于形成多层抗蚀膜的中间抗蚀膜；使用该抗反射膜组合物在基底上形成抗反射膜的图案化工艺；以及具有该抗反射膜作为中间抗蚀膜的基底。
• Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same
  申请人：Hatakeyama Jun

  公开号：US20050079446A1

  公开（公告）日：2005-04-14

  The present invention provides a polymer which has at least one or more of a repeating unit represented by a following general formula (1a), a repeating unit represented by a following general formula (2a) and a repeating unit represented by a following general formula (3b), and a repeating unit represented by a following general formula (1c), and a positive resist composition which contains as a base resin the polymer. Thereby, there can be provided a positive-resist composition having high sensitivity and high resolution in exposure with a high energy beam, wherein line edge roughness is small since swelling at the time of development is suppressed, and the residue after development is few.

  本发明提供了一种聚合物，它至少具有由以下通式 (1a) 表示的重复单元、由以下通式 (2a) 表示的重复单元和由以下通式 (3b) 表示的重复单元以及由以下通式 (1c) 表示的重复单元中的一个或多个，以及一种含有该聚合物作为基树脂的正抗蚀剂组合物。因此，可以提供一种在高能量光束下曝光时具有高灵敏度和高分辨率的正抗蚀剂组合物，由于抑制了显影时的膨胀，因此线边缘粗糙度小，显影后的残留物少。
• CYCLIC COMPOUND, PROCESS FOR PRODUCTION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND RESIST PATTERN FORMATION METHOD
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：EP2505576B1

  公开（公告）日：2019-04-24
• RADIATION SENSITIVE COMPOSITIONS CONTAINING IMAGE QUALITY AND PROFILE ENHANCEMENT ADDITIVES
  申请人：Arch Specialty Chemicals, Inc.

  公开号：EP1301829A1

  公开（公告）日：2003-04-16