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1-(4-hydroxyphenyl)-4,4-bis(3-methyl-4-hydroxyphenyl)-cyclohexane | 259091-80-0

中文名称
——
中文别名
——
英文名称
1-(4-hydroxyphenyl)-4,4-bis(3-methyl-4-hydroxyphenyl)-cyclohexane
英文别名
4-[1-(4-hydroxy-3-methylphenyl)-4-(4-hydroxyphenyl)cyclohexyl]-2-methylphenol
1-(4-hydroxyphenyl)-4,4-bis(3-methyl-4-hydroxyphenyl)-cyclohexane化学式
CAS
259091-80-0
化学式
C26H28O3
mdl
——
分子量
388.507
InChiKey
AANJLHUEXXBOGQ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 沸点:
    580.9±50.0 °C(Predicted)
  • 密度:
    1.194±0.06 g/cm3(Predicted)

计算性质

  • 辛醇/水分配系数(LogP):
    7
  • 重原子数:
    29
  • 可旋转键数:
    3
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.31
  • 拓扑面积:
    60.7
  • 氢给体数:
    3
  • 氢受体数:
    3

反应信息

点击查看最新优质反应信息

文献信息

  • Diphenol and process for producing the same
    申请人:——
    公开号:US20040049086A1
    公开(公告)日:2004-03-11
    The invention provides a diphenol represented by the general formula (I) 1 wherein X is a divalent cyclic hydrocarbon group selected from 1-cyclohexene-1,4-ylene group, 1,4-cyclohexylene group and p-phenylene group, R is an alkyl group of 1-4 carbon atoms, n is 0 or an integer of 1-3 when X is 1-cyclohexene-1,4-ylene group and an integer of 1-3 when X is 1,4-cyclohexylene group or p-phenylene group. The invention further provides a process for the production of the same.
    本发明提供了一种由通式(I)1表示的二苯酚,其中X是从1-环己烯-1,4-亚基基团、1,4-环己亚基基团和p-苯亚基基团中选择的二价环烃基团,R是1-4碳原子的烷基基团,当X是1-环己烯-1,4-亚基基团时,n为0或1-3的整数,当X是1,4-环己亚基基团或p-苯亚基基团时,n为1-3的整数。本发明还提供了一种其生产方法。
  • Mask blank, method for manufacturing mask blank and transfer mask
    申请人:HOYA CORPORATION
    公开号:US10042247B2
    公开(公告)日:2018-08-07
    There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.
    本发明提供了一种掩膜坯料,其基板上包括:用于形成转印图案的薄膜;形成在薄膜上的抗蚀剂底层,由抗蚀剂底层组合物制成,该抗蚀剂底层组合物含有具有内酯环的单元结构和具有羟基的单元结构的聚合物;形成在抗蚀剂底层薄膜上的抗蚀剂薄膜,由抗蚀剂组合物制成;以及形成在抗蚀剂底层薄膜和抗蚀剂薄膜之间的混合薄膜,由含有抗蚀剂底层组合物和抗蚀剂组合物的混合成分制成。
  • Electron beam resist underlayer film-forming composition containing lactone-structure-containing polymer
    申请人:NISSAN CHEMICAL INDUSTRIES, LTD.
    公开号:US10289002B2
    公开(公告)日:2019-05-14
    An electron beam resist underlayer film-forming composition includes a polymer containing a unit structure having a lactone ring and a unit structure having a hydroxy group. The polymer may be a polymer obtained by copolymerizing a monomer mixture containing a lactone (meth)acrylate, a hydroxyalkyl (meth)acrylate, and phenyl (meth)acrylate or benzyl (meth)acrylate. A method for producing a semiconductor device including: applying the electron beam resist underlayer film-forming composition onto a substrate and heating the applied composition to form an electron beam resist underlayer film; coating the electron beam resist underlayer film with an electron beam resist; irradiating the substrate coated with the electron beam resist underlayer film and the electron beam resist with an electron beam; developing the substrate; and transferring an image onto the substrate by dry etching to form an integrated circuit element.
    一种电子束抗蚀剂底层成膜组合物包括一种聚合物,该聚合物含有一个具有内酯环的单元结构和一个具有羟基的单元结构。该聚合物可以是通过共聚含有内酯(甲基)丙烯酸酯、羟基烷基(甲基)丙烯酸酯和苯基(甲基)丙烯酸酯或苄基(甲基)丙烯酸酯的单体混合物而得到的聚合物。一种生产半导体器件的方法,包括:将电子束抗蚀剂底层成膜组合物涂在基片上并加热所涂组合物以形成电子束抗蚀剂底层膜;用电子束抗蚀剂涂覆电子束抗蚀剂底层膜;用电子束照射涂有电子束抗蚀剂底层膜和电子束抗蚀剂的基片;显影基片;以及通过干蚀刻将图像转移到基片上以形成集成电路元件。
  • ELECTRON BEAM RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING LACTONE-STRUCTURE-CONTAINING POLYMER
    申请人:NISSAN CHEMICAL INDUSTRIES, LTD.
    公开号:US20160363863A1
    公开(公告)日:2016-12-15
    An electron beam resist underlayer film-forming composition includes a polymer containing a unit structure having a lactone ring and a unit structure having a hydroxy group. The polymer may be a polymer obtained by copolymerizing a monomer mixture containing a lactone (meth)acrylate, a hydroxyalkyl (meth)acrylate, and phenyl (meth)acrylate or benzyl (meth)acrylate. A method for producing a semiconductor device including: applying the electron beam resist underlayer film-forming composition onto a substrate and heating the applied composition to form an electron beam resist underlayer film; coating the electron beam resist underlayer film with an electron beam resist; irradiating the substrate coated with the electron beam resist underlayer film and the electron beam resist with an electron beam; developing the substrate; and transferring an image onto the substrate by dry etching to form an integrated circuit element.
  • MASK BLANK, METHOD FOR MANUFACTURING MASK BLANK AND TRANSFER MASK
    申请人:HOYA CORPORATION
    公开号:US20170285460A1
    公开(公告)日:2017-10-05
    There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.
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