申请人:FUJIFILM Corporation
公开号:US11256173B2
公开(公告)日:2022-02-22
An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor and a pattern forming method, in which the formation of particles including metal atoms can be reduced and an excellent pattern can be formed.
A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: a quaternary ammonium compound represented by Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn, and a total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.
本发明的目的是提供一种用于制造半导体的处理液和一种图案形成方法,在这种处理液和方法中,可以减少包括金属原子在内的颗粒的形成,并且可以形成极好的图案。
根据本发明的一个实施方案,用于制造半导体的处理液包括:由式(N)表示的季铵盐化合物;至少一种添加剂,该添加剂选自由阴离子表面活性剂、非离子表面活性剂、阳离子表面活性剂和螯合剂组成的组;以及水。用于制造半导体的处理液包括一种或两种以上选自 Na、K、Ca、Fe、Cu、Mg、Mn、Li、Al、Cr、Ni 和 Zn 组的金属原子,且金属原子的总质量相对于添加剂总质量和金属原子总质量之和为 1 质量 ppt 至 1 质量 ppm。