2H-Benzotriazole-2-pentanamine | 863971-70-4

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并三唑类
• 英文名称: 2H-Benzotriazole-2-pentanamine
• 英文别名: 5-(benzotriazol-2-yl)pentan-1-amine
• CAS: 863971-70-4
• 化学式: C₁₁H₁₆N₄
• 分子量: 204.27
• InChiKey: YZTYEGCWRPJWEE-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.7
• 重原子数：
  15
• 可旋转键数：
  5
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.45
• 拓扑面积：
  56.7
• 氢给体数：
  1
• 氢受体数：
  3

文献信息

• Methods for stripping material for wafer reclamation
  申请人：ADVANCED TECHNOLOGY MATERIALS, INC.

  公开号：EP1975987A2

  公开（公告）日：2008-10-01

  Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and/or reuse of said structure.

  用于从被剔除的微电子器件结构上去除至少一层材料层的去除组合物和工艺。去除组合物包括氢氟酸。该组合物可大量去除待去除的材料，同时不损坏待保留的材料层，以便对所述结构进行回收、再加工、再循环和/或再利用。
• Wet clean compositions for CoWP and porous dielectrics
  申请人：AIR PRODUCTS AND CHEMICALS, INC.

  公开号：EP2199379A1

  公开（公告）日：2010-06-23

  The present invention is a formulation for wet clean removal of post etch and ash residue from a semiconductor substrate having a CoWP feature, consisting of; deionized water; organic acid; amine and/or quaternary ammonium hydroxide, and either: (a) the molar ratio of amine and/or quaternary ammonium hydroxide to organic acid provides a pH in the range of 7-14; and/or (b) the formulation includes a corrosion inhibitor and/or oxygen scavenger. A method of using the formulation is also described.

  本发明是一种用于湿法清除具有 CoWP 特征的半导体衬底上的蚀刻后残留物和灰渣的配方，其成分包括 去离子水 有机酸； 胺和/或季铵氢氧化物，以及 (a) 氨基和/或季氢氧化铵与有机酸的摩尔比使 pH 值在 7-14 之间；和/或 (b) 配方包括腐蚀抑制剂和/或氧清除剂。 此外，还介绍了使用该制剂的方法。
• Copper passivating post-chemical mechanical polishing cleaning composition and method of use
  申请人：Advanced Technology Materials, Inc.

  公开号：EP2687589A2

  公开（公告）日：2014-01-22

  Alkaline aqueous cleaning compositions and processes for cleaning post-chemical mechanical polishing (CMP) residue, post-etch residue and/or contaminants from a microelectronic device having said residue and contaminants thereon. The alkaline aqueous cleaning compositions include amine, passivating agent, and water. The composition achieves highly efficacious cleaning of the residue and contaminant material from the microelectronic device while simultaneously passivating the metal interconnect material.

  碱性水基清洗组合物和工艺，用于清洗微电子器件上的化学机械抛光（CMP）后残留物、蚀刻后残留物和/或污染物。碱性水基清洗组合物包括胺、钝化剂和水。该组合物能高效清洗微电子设备上的残留物和污染物，同时还能使金属互连材料钝化。
• ETCHING SOLUTION HAVING SILICON OXIDE CORROSION INHIBITOR AND METHOD OF USING THE SAME
  申请人：Versum Materials US, LLC

  公开号：EP3666852A2

  公开（公告）日：2020-06-17

  Described herein is an etching solution suitable for the selective removal of polysilicon over silicon oxide from a microelectronic device, which comprises: water; at least one of a quaternary ammonium hydroxide compound; optionally at least one alkanolamine compound; a water-miscible solvent; at least one nitrogen containing compound selected from the group consisting of a C4-12 alkylamine, a polyalkylenimine, a polyamine, a nitrogen-containing heterocyclic compound, a nitrogen-containing aromatic compound, or a nitrogen-containing heterocyclic and aromatic compound ; and optionally, a surfactant.

  本文描述了一种蚀刻溶液，适用于从微电子设备中选择性去除氧化硅上的多晶硅，该溶液包括水；至少一种氢氧化季铵盐化合物；可选的至少一种烷醇胺化合物；水混溶溶剂；至少一种选自 C4-12 烷基胺、多烷亚胺、多胺、含氮杂环化合物、含氮芳香族化合物或含氮杂环和芳香族化合物的含氮化合物；以及可选的表面活性剂。
• POLISHING COMPOSITIONS AND METHODS OF USING SAME
  申请人：FUJIFILM Electronic Materials U.S.A., Inc.

  公开号：EP3995550A1

  公开（公告）日：2022-05-11

  This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C4 to C40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.

  本公开涉及一种抛光组合物，其中包括至少一种研磨剂；至少一种氮化物去除率还原剂、酸或碱；以及水。至少一种氮化物去除率还原剂可包括含有 C4 至 C40 碳氢基团的疏水部分；以及含有至少一种选自亚硫酸基团、硫酸基团、磺酸基团、羧酸基团、磷酸基团和膦酸基团的亲水部分；其中疏水部分和亲水部分由 0 至 10 个环氧亚烷基团分隔。抛光组合物的 pH 值可从约 2 到约 6.5。