There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.
本发明公开了一种用于生产半导体器件的清洗液,其包括(A)含
氟化合物;(B)
水溶性或
水混溶性有机溶剂;以及(C)
无机酸和/或有机酸,可选地,还包括(D)季
铵盐或(D')特定有机
羧酸铵盐和/或有机
羧酸胺盐;以及一种半导体器件的生产工艺,在表面装有绝缘膜层或
金属导电层的基片上形成抗蚀图案,通过干法蚀刻形成通孔或电线,通过氧等离子体灰化处理去除抗蚀图案,并用上述清洗液进行清洗处理。上述清洗液和生产工艺可轻松去除干法蚀刻时形成的沉积聚合物,而不会损害
金属膜和绝缘膜。