Processes for producing .alpha.-fluoroacrylic acid esters and
申请人:Daikin Kogyo Co., Ltd.
公开号:US04604482A1
公开(公告)日:1986-08-05
This invention provides a process for preparing an .alpha.-fluoroacrylic acid ester characterized by reacting 2,2,3,3-tetrafluorooxetane, a metal halide, an alcohol and a dehalogenating agent. This invention also provides a process for preparing .alpha.-fluoroacrylic acid fluoride, CH.sub.2 .dbd.CFCOF, which is an intermediate for preparing the .alpha.-fluoroacrylic acid ester.
Intramolecular Diels–Alder (IMDA) reaction of α-fluoroacrylate derivatives 1a–e having 1,7,9-decatrienoate system is efficiently promoted by the novelbidentateLewisacid A generated in situ by mixing 3,3′,5,5′-tetrabromo-1,1′-biphenyl-2,2′-diol (Br4BIPOL, 1 mol) and trimethylaluminum (2 mol). The IMDA reaction of α-fluoroacrylates proceeds via endo-boat transition state as in the case of the corresponding
This invention provides (i) novel hexafluoroneopentyl alcohol, (ii) its derivatives, i.e., hexafluoroneopentyl (meth)acrylate, (iii) fluorinated polymers comprising said acrylate as the monomer component, and (iv) optical materials comprising said fluorinated polymers.
POLYMERIZABLE FLUORINE-CONTAINING MONOMER, FLUORINE-CONTAINING POLYMER AND METHOD OF FORMING RESIST PATTERN
申请人:Yamashita Tsuneo
公开号:US20100297564A1
公开(公告)日:2010-11-25
A polymerizable fluorine-containing monomer and a fluorine-containing polymer which are suitable for a resist layer and a protective layer of a laminated resist for forming a fine pattern in production of semiconductor devices, and further are useful especially in immersion lithography using water as a liquid medium, and a method of forming a resist pattern are provided. The polymerizable fluorine-containing monomer is represented by the formula (1):
wherein R
1
is hydrogen atom or a monovalent saturated or unsaturated hydrocarbon group of 1 to 15 carbon atoms, and the hydrocarbon group may be chain or cyclic structure and may have oxygen atom, nitrogen atom, sulfur atom or halogen atom, the polymer is a homopolymer or copolymer of the monomer, and the method of forming a resist pattern using such a homopolymer or copolymer is carried out by immersion lithography.