SOLUTION AND METHOD FOR REMOVAL OF GROUP III-V ELEMENT OXIDE, SOLUTION FOR TREATMENT OF GROUP III-V ELEMENT COMPOUND, SOLUTION FOR PREVENTING OXIDATION OF GROUP III-V ELEMENT, SOLUTION FOR TREATMENT OF SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCTION OF SEMICONDUCTOR SUBSTRATE PRODUCT
申请人:Fujifilm Corporation
公开号:EP3258485A1
公开(公告)日:2017-12-20
Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.
本发明提供了一种用于去除 III-V 族元素氧化物的去除液、一种用于防止 III-V 族元素氧化物氧化的防氧化液或一种用于处理 III-V 族元素氧化物的处理液,每种液体都包括一种酸和一种巯基化合物;以及一种使用上述每种液体的方法。此外,还提供了一种用于处理半导体衬底的处理液,包括一种酸和一种巯基化合物,以及一种使用该处理液生产半导体衬底产品的方法。