5-Tert-butylthiophene-2-sulfonic acid

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机磺酸及其衍生物
• 英文名称: 5-Tert-butylthiophene-2-sulfonic acid
• 化学式: C₈H₁₂O₃S₂
• 分子量: 220.3
• InChiKey: VQIKSHUGHZMRPE-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.4
• 重原子数：
  13
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  91
• 氢给体数：
  1
• 氢受体数：
  4

文献信息

• Pattern formation methods and photoresist pattern overcoat compositions
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US11003074B2

  公开（公告）日：2021-05-11

  A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

  一种图案形成方法，包括：(a) 提供半导体衬底；(b) 在半导体衬底上形成光刻胶图案，其中光刻胶图案由光刻胶组合物形成，光刻胶组合物包括包含可酸基团的第一种聚合物；以及光酸发生器； (c) 在光刻胶图案上涂覆图案涂层组合物，其中图案涂层组合物包含第二种聚合物和有机溶剂，其中有机溶剂包含一种或多种酯溶剂，其中酯溶剂的式为 R1-C(O)O-R2，其中 R1 为 C3-C6 烷基，R2 为 C5-C10 烷基；(d) 烘烤涂层光刻胶图案；以及 (e) 用漂洗剂漂洗涂层光刻胶图案，以去除第二种聚合物。这些方法特别适用于半导体器件的制造。
• PATTERN FORMATION METHODS AND PHOTORESIST PATTERN OVERCOAT COMPOSITIONS
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US20210232047A1

  公开（公告）日：2021-07-29

  A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R 1 —C(O)O—R 2 , wherein R 1 is a C3-C6 alkyl group and R 2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.
• [EN] PHARMACEUTICAL AND VETERINARY USES OF ENDOTHELIN ANTAGONISTS<br/>[FR] UTILISATIONS PHARMACEUTIQUES ET VETERINAIRES D'ANTAGONISTES DE L'ENDOTHELINE ET APPLICATIONS ASSOCIEES
  申请人：TEXAS BIOTECHNOLOGY CORP

  公开号：WO2001049289A1

  公开（公告）日：2001-07-12

  Pharmaceutical and veterinary uses of endothelin antagonists are provided. In particular, methods of treatment of laminitis, such as equine and bovine laminitis, by administration of one or more endothelin antagonists are provided. Methods of treatment, prevention, or amelioration of one or more symptoms of menopause; osteoporosis and metabolic bone disorders; climacteric disorders including hot flushes or flashes, abnormal clotting patterns, urogenital discomfort and increased incidence of cardiovascular disease, and other disorders associated with the reduction in ovarian function in women; pre-eclampsia; and control and management of labor during pregnancy by administration of endothelin antagonists are also provided.