Pentanoic acid, 1,1-dimethylpropyl ester | 117421-32-6

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: Pentanoic acid, 1,1-dimethylpropyl ester
• 英文别名: 2-methylbutan-2-yl pentanoate
• CAS: 117421-32-6
• 化学式: C₁₀H₂₀O₂
• 分子量: 172.26
• InChiKey: HESXDTDXXBSJET-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3
• 重原子数：
  12
• 可旋转键数：
  6
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.9
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• QUATERNARY AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20150357204A1

  公开（公告）日：2015-12-10

  A quaternary ammonium salt compound is represented by the following formula (A-1), wherein, R 1 , R 2 , and R 3 each represent an alkyl group, an alkenyl group, an aryl group, or an aralkyl group, a part or all of hydrogen atoms in these groups may be substituted by a hydroxyl group(s), an alkoxy group(s), or a halogen atom(s), and these groups may include one or more of a carbonyl group and an ester bond; R 4 represents a single bond, an alkylene group, an alkenylene group, an arylene group, or an aralkylene group, a part or all of hydrogen atoms in these groups may be substituted by an alkoxy group(s) or a halogen atom(s), and these groups may include one or more of an ether bond, a carbonyl group, an ester bond, and an amide bond; and A − represents a non-nucleophilic counter ion.

  一个四元铵盐化合物由以下式（A-1）表示，其中，R1、R2和R3分别代表烷基、烯基、芳基或芳基烷基，这些基团中的氢原子的一部分或全部可以被羟基、烷氧基或卤原子取代，这些基团中可能包括一个或多个羰基和酯键；R4代表一个单键、烷基、烯基、芳基或芳基烷基，这些基团中的氢原子的一部分或全部可以被烷氧基或卤原子取代，这些基团中可能包括一个或多个醚键、羰基、酯键和酰胺键；A−代表一个非亲核对离子。
• SILICON-CONTAINING SURFACE MODIFIER, RESIST UNDERLAYER FILM COMPOSITION CONTAINING THIS, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20130210236A1

  公开（公告）日：2013-08-15

  The present invention provides a silicon-containing surface modifier wherein the modifier contains one or more of a repeating unit shown by the following general formula (A) and a partial structure shown by the following general formula (C).The present invention has an object to provide a resist underlayer film applicable not only to a negatively developed resist pattern formed by a hydrophilic organic compound but also to a conventional positively developed resist pattern formed by a hydrophobic compound.
• US20140273447A1
  申请人：——

  公开号：US20140273447A1

  公开（公告）日：2014-09-18
• US20140273448A1
  申请人：——

  公开号：US20140273448A1

  公开（公告）日：2014-09-18
• COMPOSITION FOR FORMING A COATING TYPE BPSG FILM, SUBSTRATE FORMED A FILM BY SAID COMPOSITION, AND PATTERNING PROCESS USING SAID COMPOSITION
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20150004791A1

  公开（公告）日：2015-01-01

  The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process.