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Tetrabutylammonium trifluoromethanesulfonate, >=99.0% (T)

中文名称
——
中文别名
——
英文名称
Tetrabutylammonium trifluoromethanesulfonate, >=99.0% (T)
英文别名
tetrabutylazanium;trifluoromethanesulfonic acid
Tetrabutylammonium trifluoromethanesulfonate, >=99.0% (T)化学式
CAS
——
化学式
C17H37F3NO3S+
mdl
——
分子量
392.5
InChiKey
YNJQKNVVBBIPBA-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    5.4
  • 重原子数:
    25
  • 可旋转键数:
    12
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    62.8
  • 氢给体数:
    1
  • 氢受体数:
    6

文献信息

  • Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
    申请人:Ohsawa Youichi
    公开号:US20100119970A1
    公开(公告)日:2010-05-13
    There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher. RCOO—CH 2 CF 2 SO 3 − H + (1) There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.
    揭示了一种抗性下层组合物,配置为在光刻中使用的多层抗性方法中使用,用于形成低于作为抗性上层膜的光刻胶层的一层,其中抗性下层组合物在形成下层后变得不溶解或难溶解于碱性显影剂中,且抗性下层组合物至少包括用于通过在100°C或更高温度下加热生成由通式(1)表示的酸的热酸发生剂。 可以提供一种抗性下层组合物,用于多层抗性方法(特别是双层抗性方法和三层抗性方法),该组合物用于形成低于作为抗性上层膜的光刻胶层的一层,该组合物在形成下层后变得不溶解或难溶解于碱性显影剂中,并且该组合物能够形成具有更高抗毒性效果并表现出对环境负荷较低的抗性下层膜、中间层膜等。
  • PHOSPHORESCENT METAL COMPLEX COMPOUND, METHOD FOR THE PRODUCTION THEREOF AND RADIATION EMITTING STRUCTURAL ELEMENT
    申请人:De Cola Luisa
    公开号:US20120169213A1
    公开(公告)日:2012-07-05
    A phosphorescent metal complex may include at least one metallic central atom M; and at least one ligand coordinated by the metallic central atom, wherein one ligand is bidentate with two uncharged coordination sites and comprises at least one carbene unit coordinated directly to the metal atom.
    一种磷光金属配合物可能包括至少一个金属中心原子M;以及至少一个由金属中心原子配位的配体,其中一个配体是双齿的,具有两个未带电的配位位点,并且包括至少一个卡宾基直接配位到金属原子。
  • Process for the preparation of an indole derivative
    申请人:F. Hoffmann-La Roche AG
    公开号:EP2011783A1
    公开(公告)日:2009-01-07
    A process for the preparation of indole derivatives of formula (I): which are useful as intermediates in the preparation of i.a. pharmaceutically active compounds.
    一种制备式(I)吲哚衍生物的方法:这些衍生物在制备具有药用活性的化合物中起中间体作用。
  • Gypsum board with a fluorine-containing antifungal agent
    申请人:Toreki William
    公开号:US20090104144A1
    公开(公告)日:2009-04-23
    A novel gypsum board having improved antifungal properties is disclosed. The board comprises a gypsum core, front and back paper facings, and a polymeric antifungal agent effective at inhibiting fungal growth. A preferred polymeric antifungal agent is polyDADMAC or polyTMMC. The novel gypsum board further comprises a non-polymeric antifungal agent comprising a fluorine-containing quaternary ammonium compound. Preferred non-polymeric ammonium compounds include Tetra-n-butylammonium fluoride and Tetraethylammonium fluoride. The polymeric antifungal agent can be present in the gypsum core and/or on one or both of the paper facings. The non-polymeric antifungal agent may be encapsulated in a material or ionically associated with the polymeric antifungal agent to allow releases of the non-polymeric antifungal agent over time and/or upon exposure to moisture. Methods for preparing the aforementioned novel gypsum board are also disclosed.
    揭示了一种具有改进抗真菌性能的新型石膏板。该板包括石膏芯、正面和背面纸面以及一种聚合物抗真菌剂,有效地抑制真菌生长。首选的聚合物抗真菌剂是聚DADMAC或聚TMMC。该新型石膏板还包括一种非聚合物抗真菌剂,包括含氟季铵化合物。首选的非聚合物铵化合物包括四正丁基氟化铵和四乙基氟化铵。聚合物抗真菌剂可以存在于石膏芯中和/或在正面和/或背面纸面的一侧或两侧。非聚合物抗真菌剂可以封装在材料中或离子地与聚合物抗真菌剂结合,以允许随时间释放非聚合物抗真菌剂和/或在暴露于湿气时释放。还公开了制备上述新型石膏板的方法。
  • PROCESS FOR PRODUCTION OF PHOSPHINE DERIVATIVE FROM PHOSPHINE OXIDE DERIVATIVE
    申请人:Tanaka Hideo
    公开号:US20110065961A1
    公开(公告)日:2011-03-17
    Disclosed is a process for producing a phosphine derivative from a phosphine oxide derivative, which comprises the following steps: (I) mixing a phosphine oxide derivative represented by formula (1) with a chlorinating agent in a polar organic solvent to cause the reaction between these components; and (II-1) adding a salt of a metal having an ionization tendency equal to or lower than that of aluminum to the reaction mixture and carrying out the reductive reaction in the presence of aluminum or (II-2) subjecting the reaction mixture to electrolytic reduction, thereby producing a phosphine derivative represented by formula (2). Ar n R 3-n P═O (1) Ar n R 3-n P (2) In formulae (1) and (2), Ar represents an aryl group such as a phenyl group, a phenyl group having a substituent, a heteroaromatic ring group, and a heteroaromatic ring group having a substituent; R represents an aliphatic hydrocarbon group or an aliphatic hydrocarbon group having a substituent; and n represents an integer of 0 to 3.
    本发明揭示了一种从膦氧化物衍生物制备膦衍生物的过程,包括以下步骤:(I)将由式(1)表示的膦氧化物衍生物与氯化剂在极性有机溶剂中混合,使这些成分之间发生反应;和(II-1)向反应混合物中加入具有等于或低于铝离化倾向的金属盐,并在铝的存在下进行还原反应,或(II-2)将反应混合物进行电解还原,从而产生由式(2)表示的膦衍生物。 ArnR3-nP═O(1)ArnR3-nP(2)在式(1)和(2)中,Ar表示芳基基团,例如苯基,带有取代基的苯基,杂环芳基环基团和带有取代基的杂环芳基环基团;R表示脂肪烃基或带有取代基的脂肪烃基;n表示0到3的整数。
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