6-iPr2C6H3)2C6H3), TipTer 2,6-(2,4,6-iPr3C6H2)2C6H3 was investigated. While no thermal reaction was observed (in line with DFT results), irradiation at 405 nm at low temperatures resulted in the formation of phosphagallenes DipTerP = GaCp* (1a) and TipTerP = GaCp* (1b) accompanied by release of PMe3. When warming the reaction mixture to ambient temperatures without irradiation, the clean re-formation
                                    Cp*Ga (Cp* = C 5 Me 5 ) 对Ar TerP(PMe 3 ) ( Ar Ter = Dip Ter 2,6-(2,6-iPr 2 C 6 H 3 ) 2 C 6 H 3 ), Tip Ter 2,6-(2,4,6-iPr 3 C 6 H 2 ) 2 C 6 H 3被研究。虽然没有观察到热反应(与 DFT 结果一致),但在低温下以 405 nm 照射会导致形成
磷四烯Dip TerP = GaCp* ( 1a ) 和Tip TerP = GaCp* ( 1b ) 伴随着 PMe 3的释放。当在没有辐射的情况下将反应混合物加热至环境温度时,观察到Ar TerP(PMe 3 ) 和 Cp*Ga 在二级反应中的干净再形成去除 PMe 3后,分离出1a和1b并对其进行充分表征。发现这两种衍
生物都不稳定并分解为
磷芴2a和2b,表明瞬时亚膦基Ar的生成TerP 与 Cp*Ga。首次反应性研究表明,CO