Sulphopropyl sulphide

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机磺酸及其衍生物
• 英文名称: Sulphopropyl sulphide
• 英文别名: 3-(3-sulfopropylsulfanyl)propane-1-sulfonic acid
• 化学式: C₆H₁₄O₆S₃
• 分子量: 278.4
• InChiKey: REJSMTWFWDLMQN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.6
• 重原子数：
  15
• 可旋转键数：
  8
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  151
• 氢给体数：
  2
• 氢受体数：
  7

文献信息

• [EN] ACIDIC BATH FOR ELECTROLYTICALLY DEPOSITING A COPPER DEPOSIT CONTAINING HALOGENATED OR PSEUDOHALOGENATED MONOMERIC PHENAZINIUM COMPOUNDS<br/>[FR] BAIN ACIDE DE DEPOT ELECTROLYTIQUE D'UNE COUCHE DE CUIVRE CONTENANT DES COMPOSES DE PHENAZINIUM HALOGENES OU PSEUDOHALOGENES MONOMERIQUES
  申请人：ATOTECH DEUTSCHLAND GMBH

  公开号：WO2005049584A1

  公开（公告）日：2005-06-02

  For manufacturing particularly uniform and mirror bright copper coatings that are leveled and ductile as well using a relatively high current density, halogenated or pseudohalogenated monomeric pheanzinium compounds or a purity at least 85 mole-% and having the general chemical formula (I) are utilized in which R1, R2, R3, R4. R5, R6, R7, R7’’, R8, R9, X and A¯have the significations denoted in the claims. The compounds are prepared by diazotizing a suited starting compound prior to halogenating or pseudohalogenating it in the presence of mineral acid, diazotization means and halide or pseudohalide, with the reaction steps being run in one single vessel.

  为了制造特别均匀和镜面明亮的铜涂层，同时使用相对较高的电流密度，利用含有至少85摩尔％纯度并具有一般化学式（I）的卤代或假卤代单体苯并离子化合物，这些涂层具有平整和韧性，其中R1，R2，R3，R4，R5，R6，R7，R7’’，R8，R9，X和A¯具有所述权利要求所示的含义。在矿物酸，重氮化剂和卤化物或假卤化物的存在下，通过重氮化适当的起始化合物然后卤代或假卤代它来制备这些化合物，反应步骤在一个单一的容器中进行。
• PYRIDINIUM COMPOUNDS, A SYNTHESIS METHOD THEREFOR, METAL OR METAL ALLOY PLATING BATHS CONTAINING SAID PYRIDINIUM COMPOUNDS AND A METHOD FOR USE OF SAID METAL OR METAL ALLOY PLATING BATHS
  申请人：Atotech Deutschland GmbH

  公开号：US20200231565A1

  公开（公告）日：2020-07-23

  The present invention concerns pyridinium compounds, a synthesis method for their preparation, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths. The plating baths are particularly suitable for use in filling of recessed structures in the electronics and semiconductor industry including dual damascene applications.

  本发明涉及吡啶化合物、其制备的合成方法、含有所述吡啶化合物的金属或金属合金电镀浴以及使用所述金属或金属合金电镀浴的方法。这些电镀浴特别适用于填充电子和半导体行业中的凹陷结构，包括双重达曼赛应用。
• Imidazoyl urea polymers and their use in metal or metal alloy plating bath compositions
  申请人：Atotech Deutschland GmbH

  公开号：US11066553B2

  公开（公告）日：2021-07-20

  The present invention relates to imidazoyl urea polymers and their use in aqueous acidic plating baths for metal or metal alloy deposition such as electrolytic deposition of copper or alloys thereof in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of metal ions and an imidazoyl urea polymer. The plating bath is particularly useful for filling recessed structures and build-up of pillar bump structures.

  本发明涉及咪唑基脲聚合物及其在水性酸性电镀浴中的应用，用于金属或金属合金沉积，例如在制造印刷电路板、集成电路基板、半导体和电子应用玻璃器件中的铜或其合金的电解沉积。根据本发明的电镀浴包括至少一种金属离子来源和一种咪唑基脲聚合物。该电镀浴特别适用于填充凹陷结构和构建柱形凸起结构。
• IMIDAZOYL UREA POLYMERS AND THEIR USE IN METAL OR METAL ALLOY PLATING BATH COMPOSITIONS
  申请人：Atotech Deutschland GmbH

  公开号：EP3135709A1

  公开（公告）日：2017-03-01

  The present invention relates to imidazoyl urea polymers and their use in aqueous acidic plating baths for metal or metal alloy deposition such as electrolytic deposition of copper or alloys thereof in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of metal ions and an imidazoyl urea polymer. The plating bath is particularly useful for filling recessed structures and build-up of pillar bump structures.

  本发明涉及咪唑酰基脲聚合物及其在水性酸性电镀液中的用途，该电镀液用于沉积金属或金属合金，例如在制造印刷电路板、集成电路基板、电子应用中的半导体和玻璃设备时电解沉积铜或其合金。根据本发明的电镀液包括至少一种金属离子源和咪唑酰脲聚合物。该电镀液特别适用于填充凹陷结构和柱状凸起结构。
• AN ACIDIC AQUEOUS COMPOSITION FOR ELECTROLYTICALLY DEPOSITING A COPPER DEPOSIT
  申请人：Atotech Deutschland GmbH

  公开号：EP3470552A1

  公开（公告）日：2019-04-17

  The present invention relates to an acidic aqueous composition for electrolytically depositing a copper deposit, the composition comprising (i) copper (II) ions, (ii) one or more than one compound of formula (la) (iii) one, two, three or more than three further compounds, which are different from the compound of formula (la), with the definitions given throughout the text, the use of the acidic aqueous composition for electrolytically depositing a copper deposit, the use of the compound of formula (la) as surfactant in preferably an acidic aqueous composition, a method for electrolytically depositing a copper deposit onto a substrate, and a compound of formula (la), preferably a specific compound derived from formula (la).

  本发明涉及一种用于电解沉积铜沉积物的酸性含水组合物，该组合物包括 (i) 铜 (II) 离子、 (ii) 一种或多种式(la)化合物 (iii) 一种、两种、三种或三种以上不同于式（la）化合物的其他化合物、 使用酸性水性组合物电解沉积铜沉积物，在优选的酸性水性组合物中使用式（la）化合物作为表面活性剂，将铜沉积物电解沉积到基底上的方法，以及式（la）化合物，优选由式（la）衍生的特定化合物。