[2-(Methoxymethoxy)-2-oxoethyl] 2,2-dimethylbutanoate

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: [2-(Methoxymethoxy)-2-oxoethyl] 2,2-dimethylbutanoate
• 英文别名: [2-(methoxymethoxy)-2-oxoethyl] 2,2-dimethylbutanoate
• 化学式: C₁₀H₁₈O₅
• 分子量: 218.25
• InChiKey: RXXPZAAWWDXELV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.7
• 重原子数：
  15
• 可旋转键数：
  8
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.8
• 拓扑面积：
  61.8
• 氢给体数：
  0
• 氢受体数：
  5

文献信息

• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
  申请人：FUJIFILM CORPORATION

  公开号：US20150086912A1

  公开（公告）日：2015-03-26

  There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit (A) represented by the specific formula (I) capable of generating an acid on the side chain of the resin upon irradiation with an actinic ray or radiation, and a resist film formed with the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising: exposing the resist film, and developing the exposed resist film, and a method for manufacturing a semiconductor device, containing the pattern forming method, and a semiconductor device manufactured by the manufacturing method of the semiconductor device.
• PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK
  申请人：FUJIFILM Corporation

  公开号：US20170121437A1

  公开（公告）日：2017-05-04

  A pattern forming method includes forming a film using an actinic ray-sensitive or radiation-sensitive resin composition, exposing the film with active light or radiation, and developing the exposed film using a developer including an organic solvent, in which the actinic ray-sensitive or radiation-sensitive resin composition contains a compound having a partial structure represented by General Formula (I).