2-(2-Adamantyloxy)-2-oxoethanesulfonic acid

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机磺酸及其衍生物
• 英文名称: 2-(2-Adamantyloxy)-2-oxoethanesulfonic acid
• 英文别名: 2-(2-adamantyloxy)-2-oxoethanesulfonic acid
• 化学式: C₁₂H₁₈O₅S
• 分子量: 274.34
• InChiKey: JCIRJIIIUXUFCV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.4
• 重原子数：
  18
• 可旋转键数：
  4
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.92
• 拓扑面积：
  89
• 氢给体数：
  1
• 氢受体数：
  5

文献信息

• RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170115566A1

  公开（公告）日：2017-04-27

  A resist composition comprising a base resin comprising acid labile group-containing recurring units and preferably acid generator-containing recurring units, and a sodium, magnesium, potassium, calcium, rubidium, strontium, yttrium, cesium, barium or cerium salt of α-fluorinated sulfonic acid bonded to an alkyl, alkenyl, alkynyl or aryl group exhibits a high resolution and sensitivity and forms a pattern of satisfactory profile with minimal LWR after exposure and development.

  一种抗蚀组合物包括基树脂，其中包含含酸敏感基团的重复单元，最好包含含酸发生剂的重复单元，以及与烷基、烯基、炔基或芳基结合的α-氟磺酸的钠、镁、钾、钙、铷、锶、钇、铯、钡或铈盐，表现出高分辨率和灵敏度，并在曝光和显影后形成具有最小LWR的满意轮廓图案。
• RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, ACID GENERATOR, PHOTOREACTIVE QUENCHER, AND COMPOUND
  申请人：TOKYO OHKA KOGYO CO., LTD.

  公开号：US20160280679A1

  公开（公告）日：2016-09-29

  A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a base component which exhibits changed solubility in a developing solution under action of acid and an acid-generator component including a compound (B0-1) represented by general formula (b0) shown below in which Ra 1 represents an aromatic ring; Ra 01 represents an alkyl group of 5 or more carbon atoms optionally having a substituent; Ra 02 and Ra 03 each independently represents an alkyl group of 1 to 10 carbon atoms optionally having a substituent; n1 represents an integer of 1 to 5; n2 represents an integer of 0 to 2; n3 represents an integer of 0 to 4; and X − represents a counteranion.

  一种抗蚀组合物，暴露后产生酸并在酸的作用下在显影溶液中表现出溶解度改变，包括在酸的作用下在显影溶液中表现出溶解度改变的碱性组分和包括一种化合物（B0-1）的酸发生组分，该化合物由下面所示的一般式（b0）表示，其中Ra1代表芳香环；Ra01代表具有5个或更多碳原子的烷基基团，可选地具有取代基；Ra02和Ra03各自独立地表示具有1至10个碳原子的烷基基团，可选地具有取代基；n1表示1至5的整数；n2表示0至2的整数；n3表示0至4的整数；X−表示一个反离子。
• Adhesive composition, bio-electrode, method for manufacturing a bio-electrode, and salt
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US10808148B2

  公开（公告）日：2020-10-20

  An adhesive composition including a resin and electro-conductive material, wherein the electro-conductive material is an ammonium salt of fluorosulfonic acid having 5 or more carbon atoms shown by the general formula (1): (R1—X—Z—SO3−)n Mn+ (1), wherein, R1 represents a monovalent hydrocarbon group having 1 to 40 carbon atoms and optionally substituted by a heteroatom or optionally interposed by heteroatom; X represents any of a single bond, ether group, ester group, and amide group; Z represents an alkylene group having 2 to 4 carbon atoms, containing 1 to 6 fluorine atoms, and optionally containing a carbonyl group; Mn+ represents a cation having one or two ammonium cation structures. This can form a living body contact layer for a bio-electrode with excellent electric conductivity, biocompatibility, and light weight, which manufactures at low cost and does not cause large lowering of the electric conductivity even when it is wetted with water or dried.

  一种粘合剂组合物，包括树脂和导电材料，其中导电材料是具有 5 个或更多碳原子的氟磺酸铵盐，如通式(1)所示：(R1-X-Z-SO3-)n Mn+ (1)，其中，R1 代表具有 1 至 40 个碳原子的单价烃基，可选被杂原子取代或可选被杂原子夹杂；X 代表单键、醚基、酯基和酰胺基中的任何一种；Z 代表具有 2 至 4 个碳原子的亚烷基，含有 1 至 6 个氟原子，可选含有一个羰基；Mn+ 代表具有一个或两个铵阳离子结构的阳离子。这样就可以形成生物电极的活体接触层，该层具有优异的导电性、生物相容性和轻质，制造成本低，即使被水浸湿或干燥也不会导致导电性大幅降低。
• Patterning process
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US11366386B2

  公开（公告）日：2022-06-21

  A patterning process, including: forming the first resist film from first resist material containing an acid generator and thermosetting compound having a hydroxy group and/or carboxy group protected by an acid-labile group; forming the second resist film on first resist film from a second resist material containing a metal compound (A) and a sensitizer; irradiating the first and second resist film with a high energy beam or an electron beam to perform pattern exposure to deprotect the hydroxy group and/or carboxy group in a pattern exposed portion of first resist film and to form a crosslinked portion of the component (A) with the deprotected hydroxy and/or carboxy group on the pattern exposed portion; and developing the second resist film with a developer to give a metal film pattern composed of the crosslinked portion. This provides a method for forming a thin film resist pattern with higher resolution and higher sensitivity.

  一种图形化方法，包括以下步骤： 1. 形成第一抗蚀膜：使用包含酸发生剂及具有被酸敏感基团保护的羟基和/或羧基的热固性化合物的第一抗蚀材料。 2. 形成第二抗蚀膜：在第一抗蚀膜上使用包含金属化合物(A)和感光剂的第二抗蚀材料。 3. 曝光：利用高能束或电子束照射第一和第二抗蚀膜，进行图形曝光。在此过程中，暴露区域的第一抗蚀膜中的羟基和/或羧基的保护基团被去除，同时金属化合物(A)与脱保护的羟基和/或羧基在该暴露区域形成交联部分。 4. 显影：使用显影剂显影第二抗蚀膜，形成由交联部分构成的金属膜图案。 此方法能够实现更高分辨率和更高灵敏度的薄膜抗蚀图形制备。
• RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND COMPOUND
  申请人：Tokyo Ohka Kogyo Co., Ltd.

  公开号：US20140178821A1

  公开（公告）日：2014-06-26

  A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, including a base component (A) which exhibits changed solubility in a developing solution under action of acid, and a photo-decomposable quencher (D0) containing a compound represented by general formula (d0) shown below. In the formula, R 1 represents a hydrocarbon group of 4 to 20 carbon atoms which may have a substituent; Y 1 represents a single bond or a divalent linking group; R 2 and R 3 each independently represents a substituent of 0 to 20 carbon atoms other than a fluorine atom; one of R 2 and R 3 may form a ring with Y 1 ; M m+ represents an organic cation having a valency of m; and m represents an integer of 1 or more.