2-(1-Adamantylmethoxy)-1-fluoro-2-oxoethanesulfonic acid

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机磺酸及其衍生物
• 英文名称: 2-(1-Adamantylmethoxy)-1-fluoro-2-oxoethanesulfonic acid
• 英文别名: 2-(1-adamantylmethoxy)-1-fluoro-2-oxoethanesulfonic acid
• 化学式: C₁₃H₁₉FO₅S
• 分子量: 306.35
• InChiKey: ASRUWZPZWNCQGI-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.4
• 重原子数：
  20
• 可旋转键数：
  5
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.92
• 拓扑面积：
  89
• 氢给体数：
  1
• 氢受体数：
  6

文献信息

• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20210364917A1

  公开（公告）日：2021-11-25

  The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition having excellent storage stability during long-term storage. In addition, also provided are a resist film, a pattern forming method, and a method for manufacturing an electronic device, each relating to the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a compound represented by General Formula (I) and an acid-decomposable resin. M 1 + A − -L-B − M 2 + (I)

  本发明提供了一种具有长期储存期间优异储存稳定性的光致射线敏感性或辐射敏感性树脂组合物。此外，还提供了与该光致射线敏感性或辐射敏感性树脂组合物相关的抗蚀膜、图案形成方法和电子器件制造方法。本发明实施例中的光致射线敏感性或辐射敏感性树脂组合物包括由通式（I）表示的化合物和酸可分解树脂。M1+A−-L-B−M2+（I）
• ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMATION METHOD, MASK BLANK WITH RESIST FILM, METHOD FOR MANUFACTURING PHOTOMASK, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
  申请人：Fujifilm Corporation

  公开号：EP3731016A1

  公开（公告）日：2020-10-28

  The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition that can provide a resist film with excellent sensitivity and a pattern with excellent LER performance, and can suppress pattern collapse during pattern formation. In addition, the present invention also provides a resist film, a pattern forming method, a mask blank with a resist film, a method for producing a photomask, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a resin X having a repeating unit A represented by General Formula (I), a repeating unit B having an acid-decomposable group, and a repeating unit C selected from a repeating unit c1 represented by General Formula (II) and the like; a compound Y which is a basic compound or ammonium salt compound whose basicity is reduced upon irradiation with actinic rays or radiation; and a photoacid generator Z which is a compound other than the compound Y.

  本发明提供了一种感光树脂或辐射敏感树脂组合物，该组合物可提供感光度极佳的抗蚀剂薄膜和 LER 性能极佳的图案，并可在图案形成过程中抑制图案塌陷。此外，本发明还提供了一种光刻胶膜、一种图案形成方法、一种带有光刻胶膜的掩膜坯、一种光掩膜的生产方法和一种电子设备的制造方法，每种方法都使用了该感光或辐射敏感树脂组合物。本发明一个实施例的感光或辐射敏感树脂组合物包括树脂 X，其具有通式（I）表示的重复单元 A、具有可酸化基团的重复单元 B 和选自通式（II）表示的重复单元 c1 及类似物的重复单元 C；化合物 Y，其为碱性化合物或铵盐化合物，其碱性在光射线或辐射照射时降低；以及光酸发生器 Z，其为化合物 Y 以外的化合物。
• Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film and method of forming pattern
  申请人：FUJIFILM Corporation

  公开号：US10234759B2

  公开（公告）日：2019-03-19

  Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (A) and any of compounds (B) of general formula (I) below. (In general formula (I), Rf represents a fluorine atom or a monovalent organic group containing at least one fluorine atom; R1 represents a hydrogen atom or a monovalent substituent containing no fluorine atom; X1 represents a monovalent organic group having at least two carbon atoms, or a methyl group in which a substituent other than a fluorine atom is optionally introduced, provided that X1 may be bonded to R1 to thereby form a ring; and Z represents a moiety that when exposed to actinic rays or radiation, is converted to a sulfonic acid group, an imidic acid group or a methide acid group).

  本发明提供了一种对辐照或辐射敏感的树脂组合物，该组合物包括树脂(A)和以下通式(I)的任何化合物(B)。(在通式（I）中，Rf 代表氟原子或含有至少一个氟原子的一价有机基团；R1 代表氢原子或不含氟原子的一价取代基；X1 代表至少含有两个碳原子的一价有机基团，或可选择引入氟原子以外的取代基的甲基，条件是 X1 可与 R1 键合，从而形成一个环；以及 Z 代表当暴露于放热射线或辐射时会转化为磺酸基团、酰亚胺酸基团或甲酰胺酸基团的分子）。
• Actinic ray-sensitive or radiation sensitive resin composition, actinic raysensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, and photoacid generator
  申请人：FUJIFILM Corporation

  公开号：US11073762B2

  公开（公告）日：2021-07-27

  Provided are an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a photoacid generator that generates an acid having a pKa of −1.40 or more upon irradiation with actinic rays or radiation, and (B) a resin having a repeating unit containing an acid-decomposable group, in which an Eth sensitivity of the repeating unit containing an acid-decomposable group is 5.64 or less, and which can provide very excellent roughness performance, exposure latitude, and depth of focus, particularly, in the formation of an ultrafine pattern; a photoacid generator; and an actinic ray-sensitive or radiation-sensitive film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

  本发明提供了一种光敏或辐射敏感树脂组合物，该组合物包含：(A) 光酸发生器，该光酸发生器在光射线或辐射照射下生成 pKa 值为 -1.40 或更高的酸，以及 (B) 具有包含酸可分解基团的重复单元的树脂，其中包含酸可分解基团的重复单元的乙烷灵敏度为 5.64 或更低，并能提供非常优异的粗糙度性能、曝光宽容度和焦距深度，特别是在形成超细图案时；光酸发生器；以及对射线或辐射敏感的胶片、图案形成方法和电子设备制造方法，每种方法都使用对射线或辐射敏感的树脂组合物。
• ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN
  申请人：FUJIFILM CORPORATION

  公开号：US20150338736A1

  公开（公告）日：2015-11-26

  Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (A) and any of compounds (B) of general formula (I) below. (In general formula (I), Rf represents a fluorine atom or a monovalent organic group containing at least one fluorine atom; R 1 represents a hydrogen atom or a monovalent substituent containing no fluorine atom; X 1 represents a monovalent organic group having at least two carbon atoms, or a methyl group in which a substituent other than a fluorine atom is optionally introduced, provided that X 1 may be bonded to R 1 to thereby form a ring; and Z represents a moiety that when exposed to actinic rays or radiation, is converted to a sulfonic acid group, an imidic acid group or a methide acid group.)