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Methyl 4-methyl-2-propan-2-yl-2-(trifluoromethyl)pentanoate

中文名称
——
中文别名
——
英文名称
Methyl 4-methyl-2-propan-2-yl-2-(trifluoromethyl)pentanoate
英文别名
methyl 4-methyl-2-propan-2-yl-2-(trifluoromethyl)pentanoate
Methyl 4-methyl-2-propan-2-yl-2-(trifluoromethyl)pentanoate化学式
CAS
——
化学式
C11H19F3O2
mdl
——
分子量
240.26
InChiKey
XRPHWPZKEYHPHR-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    4
  • 重原子数:
    16
  • 可旋转键数:
    5
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.91
  • 拓扑面积:
    26.3
  • 氢给体数:
    0
  • 氢受体数:
    5

文献信息

  • [EN] ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN<br/>[FR] COMPOSITION DE RÉSINE ET FILM SENSIBLES AUX RAYONS ACTINIQUES OU À LA RADIATION ACTINIQUE ET PROCÉDÉ DE FORMATION DE MOTIF
    申请人:FUJIFILM CORP
    公开号:WO2014104400A1
    公开(公告)日:2014-07-03
    Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (A) and any of compounds (B) of general formula (I) below. (In general formula (I), Rf represents a fluorine atom or a monovalent organic group containing at least one fluorine atom; R1 represents a hydrogen atom or a monovalent substituent containing no fluorine atom; X1 represents a monovalent organic group having at least two carbon atoms, or a methyl group in which a substituent other than a fluorine atom is optionally introduced, provided that X1 may be bonded to R1 to thereby form a ring; and Z represents a moiety that when exposed to actinic rays or radiation, is converted to a sulfonic acid group, an imidic acid group or a methide acid group.)
  • [EN] PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND<br/>[FR] PROCÉDÉ DE FORMATION DE MOTIF, COMPOSITION DE RÉSINE SENSIBLE À DES RAYONS ACTINIQUES OU À UN RAYONNEMENT, FILM DE RÉSERVE, PROCÉDÉ DE FABRICATION DE DISPOSITIF ÉLECTRONIQUE, DISPOSITIF ET COMPOSÉ ÉLECTRONIQUES
    申请人:FUJIFILM CORP
    公开号:WO2014133187A1
    公开(公告)日:2014-09-04
    There is provided a pattern forming method comprising (i) a step of forming a film containing an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a compound represented by the specific formula, (B) a compound different from the compound (A) and capable of generating an acid upon irradiation with an actinic ray or radiation, and (P) a resin that does not react with the acid generated from the compound (A) and is capable of decreasing the solubility for an organic solvent-containing developer by the action of the acid generated from the compound (B), (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern; the actinic ray-sensitive or radiation-sensitive resin composition above; a resist film using the composition.
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