[Cyclohexyl(cyclohexyloxy)methyl] 2,2-dimethylbutanoate

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: [Cyclohexyl(cyclohexyloxy)methyl] 2,2-dimethylbutanoate
• 英文别名: [cyclohexyl(cyclohexyloxy)methyl] 2,2-dimethylbutanoate
• 化学式: C₁₉H₃₄O₃
• 分子量: 310.5
• InChiKey: ZPDRGSLUKWPGPE-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.1
• 重原子数：
  22
• 可旋转键数：
  7
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.95
• 拓扑面积：
  35.5
• 氢给体数：
  0
• 氢受体数：
  3

文献信息

• COMPOUND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE
  申请人：FUJIFILM CORPORATION

  公开号：US20160024005A1

  公开（公告）日：2016-01-28

  There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a compound represented by the following formula (1) or (2), and the formula (1) and (2) are defined as herein, and a resist film comprising the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising a step of exposing the resist film, and a step of developing the exposed film, and a method for manufacturing an electronic device, comprising the pattern forming method, and an electronic device manufactured by the manufacturing method of an electronic device.

  提供了一种包含下列式子（1）或（2）所代表的化合物的光致射线敏感或辐射敏感的树脂组合物，其中式（1）和（2）的定义如本文所述，以及包括该光致射线敏感或辐射敏感的树脂组合物的光阻膜，以及包括曝光光阻膜的步骤和显影曝光膜的步骤的图案形成方法，以及包括图案形成方法的制造电子装置的方法，以及由电子装置的制造方法制造的电子装置。
• Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device
  申请人：FUJIFILM Corporation

  公开号：US10031419B2

  公开（公告）日：2018-07-24

  There is provided a pattern forming method comprising (i) forming a film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a resin which decomposes due to an action of an acid to change its solubility with respect to a developer and (C) a specific resin, (ii) forming a top coat layer using a top coat composition which contains a resin (T) on the film, (iii) exposing the film which has the top coat layer to actinic rays or radiation, and (iv) forming a pattern by developing the film which has the top coat layer after the exposing.

  本发明提供了一种图案形成方法，包括(i)使用感光树脂组合物或辐射敏感树脂组合物在基底上形成胶片，该组合物包含(A)由于酸的作用而分解，从而改变其相对于显影剂的溶解度的树脂和(C)特定树脂、(ii) 使用含有树脂 (T) 的表层组合物在胶片上形成表层，(iii) 将具有表层的胶片暴露于放 射线或辐射，(iv) 在暴露后对具有表层的胶片进行显影，形成图案。
• ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN
  申请人：FUJIFILM CORPORATION

  公开号：US20140227636A1

  公开（公告）日：2014-08-14

  Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (Aa) containing at least one repeating unit (Aa1) derived from monomers of general formula (aa1-1) below and at least one repeating unit (Aa2) derived from monomers of general formula (aa2-1) below and comprising a resin (Ab) that when acted on by an acid, changes its alkali solubility.
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME
  申请人：FUJIFILM Corporation

  公开号：US20140295332A1

  公开（公告）日：2014-10-02

  An actinic ray-sensitive or radiation-sensitive resin composition, which is excellent in sensitivity, resolution, a pattern profile and a depth of focus (DOF), and, an actinic ray-sensitive or radiation-sensitive film and a pattern forming method, each using the same, are provided. The actinic ray-sensitive or radiation-sensitive resin composition includes a nitrogen-containing compound and a resin (Ab) capable of varying a polarity or an alkali solubility thereof by the action of an acid.
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
  申请人：FUJIFILM CORPORATION

  公开号：US20150086912A1

  公开（公告）日：2015-03-26

  There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit (A) represented by the specific formula (I) capable of generating an acid on the side chain of the resin upon irradiation with an actinic ray or radiation, and a resist film formed with the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising: exposing the resist film, and developing the exposed resist film, and a method for manufacturing a semiconductor device, containing the pattern forming method, and a semiconductor device manufactured by the manufacturing method of the semiconductor device.