(1-Cyclohexyloxy-2-methylpropyl) 2-methylbutanoate

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: (1-Cyclohexyloxy-2-methylpropyl) 2-methylbutanoate
• 英文别名: (1-cyclohexyloxy-2-methylpropyl) 2-methylbutanoate
• 化学式: C₁₅H₂₈O₃
• 分子量: 256.38
• InChiKey: UDNJHIONPUFOCH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.7
• 重原子数：
  18
• 可旋转键数：
  7
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.93
• 拓扑面积：
  35.5
• 氢给体数：
  0
• 氢受体数：
  3

文献信息

• ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN
  申请人：FUJIFILM CORPORATION

  公开号：US20140227636A1

  公开（公告）日：2014-08-14

  Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (Aa) containing at least one repeating unit (Aa1) derived from monomers of general formula (aa1-1) below and at least one repeating unit (Aa2) derived from monomers of general formula (aa2-1) below and comprising a resin (Ab) that when acted on by an acid, changes its alkali solubility.
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME
  申请人：FUJIFILM Corporation

  公开号：US20140295332A1

  公开（公告）日：2014-10-02

  An actinic ray-sensitive or radiation-sensitive resin composition, which is excellent in sensitivity, resolution, a pattern profile and a depth of focus (DOF), and, an actinic ray-sensitive or radiation-sensitive film and a pattern forming method, each using the same, are provided. The actinic ray-sensitive or radiation-sensitive resin composition includes a nitrogen-containing compound and a resin (Ab) capable of varying a polarity or an alkali solubility thereof by the action of an acid.
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
  申请人：FUJIFILM CORPORATION

  公开号：US20150086912A1

  公开（公告）日：2015-03-26

  There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit (A) represented by the specific formula (I) capable of generating an acid on the side chain of the resin upon irradiation with an actinic ray or radiation, and a resist film formed with the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising: exposing the resist film, and developing the exposed resist film, and a method for manufacturing a semiconductor device, containing the pattern forming method, and a semiconductor device manufactured by the manufacturing method of the semiconductor device.
• PATTERN FORMING METHOD, ELECTRON BEAM- OR EXTREME ULTRAVIOLET-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
  申请人：FUJIFILM CORPORATION

  公开号：US20150370170A1

  公开（公告）日：2015-12-24

  According to one aspect of the present invention, there is provided a pattern forming method comprising, in this order: (1) forming a film by using an electron beam- or extreme ultraviolet-sensitive resin composition containing, in a specific amount, a resin (Aa) having a specific atom or substituent; (2) exposing the film by using an electron beam or extreme ultraviolet ray; and (3) forming a negative pattern by performing development using a developer including an organic solvent after the exposure.
• ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20170242338A1

  公开（公告）日：2017-08-24

  Provided are an active-light-sensitive or radiation-sensitive resin composition in which the sensitivity is excellent, and an active-light-sensitive or radiation-sensitive film, a pattern forming method, and a method for manufacturing an electronic device, each using the active-light-sensitive or radiation-sensitive resin composition. The active-light-sensitive or radiation-sensitive resin composition contains a resin (Ab) whose polarity is changed by the action of an acid, and a compound that generates an acid upon irradiation with active light or radiation, in which the resin (Ab) includes a metal ion, and the metal type of the metal ion is at least one of metal types belonging to Groups 1 to 10 and 13 to 16 (here, excluding Mg and Cs).