Intramolecular [4 + 2] cycloadditions of nitroalkenes with olefins
作者:Scott E. Denmark、Michael S. Dappen、Christopher J. Cramer
DOI:10.1021/ja00266a036
日期:1986.3
Cycloadditions stereoselectives intramoleculaires en presence de SnCl 4 de nitro-1 nonadiene-1,7 et de nitro-2 decadiene-2,8: obtention d'oxydes-3 d'hexahydro-4a,5,6,7,8,8a benzooxazines-2,3
Cycloadditions 立体选择性分子内存在 de SnCl 4 de nitro-1 nonadiene-1,7 et de nitro-2 decadiene-2,8: 获得 d'oxydes-3 d'hexahydro-4a,5,6,7,8,8a benzooxazines -2,3
Intramolecular [4+2]-cycloadditions of nitroalkenes with olefins. 2
作者:Scott E. Denmark、Young-Choon Moon、Christopher J. Cramer、Michael S. Dappen、C.B.W. Senanayake
DOI:10.1016/s0040-4020(01)89054-2
日期:1990.1
The intramolecular [4+2]-cycloadditions of di- and trisubstituted nitroalkenes with unactivated olefins are described. The cycloadditions proceed readily at low temperatures in the presence of SnCl4. The reactions are shown to be stereospecific in the preservation of dienophile configuration in the product. The configuration of the heterodiene controls the stereochemistry of the ring fusion but the
CARBAMATE FUNCTIONAL POLYMERS AND COMPOSITIONS CONTAINING SAME
申请人:PPG INDUSTRIES, INC.
公开号:EP0925318A1
公开(公告)日:1999-06-30
COPOLYMER FOR IMMERSION LITHOGRAPHY AND COMPOSITIONS
申请人:Yamagishi Takanori
公开号:US20100047710A1
公开(公告)日:2010-02-25
The present invention provides a copolymer which can prevent problems associated with immersion lithography (including occurrence of a pattern defect such as water mark, and variation in sensitivity or abnormal patterning due to elution of an additive such as a radiation-sensitive acid-generator) and which provides surface characteristics suitable for immersion lithography, and a composition containing the copolymer.
The copolymer for immersion lithography has, at least, a repeating unit (A) that generates an alkali-soluble group by removing protecting group through action of an acid, and a repeating unit (B) having a lactone structure, wherein, when a solution of the copolymer in propylene glycol monomethyl ether acetate (hereinafter may be abbreviated as “PGMEA”) is applied to a wafer and then heated to form a thin film, and a 15-μL droplet of pure water is added onto the thin film, the inclination of the wafer at the time when the water droplet starts to move is 35° or less, or the contact angle of the top edge of the water droplet at the time when the water droplet starts to move is 64° or more.
PROCESS FOR PRODUCING POLYMER FOR SEMICONDUCTOR LITHOGRAPHY
申请人:Yamagishi Takanori
公开号:US20100048848A1
公开(公告)日:2010-02-25
To provide a method for producing a polymer for semiconductor lithography which can attain high uniformity in the polymer from lot to lot.
The method for producing a polymer for semiconductor lithography includes the step (P) of heating a polymerizable monomer and a polymerization initiator in a solvent, to thereby polymerize the monomer, the step (P) having the step of controlling a polymerization pressure by regulating a liquid level in a container (WO) which is disposed between a polymerization tank and the atmospheric air and which provides liquid sealing.