2-(7-methyl-3-bicyclo[3.3.1]nonanyl)-N-(trifluoromethylsulfonyl)acetamide

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机磺酸及其衍生物
• 英文名称: 2-(7-methyl-3-bicyclo[3.3.1]nonanyl)-N-(trifluoromethylsulfonyl)acetamide
• 化学式: C₁₃H₂₀F₃NO₃S
• 分子量: 327.37
• InChiKey: HZTZYDKYAMWAER-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.1
• 重原子数：
  21
• 可旋转键数：
  3
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.92
• 拓扑面积：
  71.6
• 氢给体数：
  1
• 氢受体数：
  6

文献信息

• [EN] PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND<br/>[FR] PROCÉDÉ DE FORMATION DE MOTIF, COMPOSITION DE RÉSINE SENSIBLE À DES RAYONS ACTINIQUES OU À UN RAYONNEMENT, FILM DE RÉSERVE, PROCÉDÉ DE FABRICATION DE DISPOSITIF ÉLECTRONIQUE, DISPOSITIF ET COMPOSÉ ÉLECTRONIQUES
  申请人：FUJIFILM CORP

  公开号：WO2014133187A1

  公开（公告）日：2014-09-04

  There is provided a pattern forming method comprising (i) a step of forming a film containing an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a compound represented by the specific formula, (B) a compound different from the compound (A) and capable of generating an acid upon irradiation with an actinic ray or radiation, and (P) a resin that does not react with the acid generated from the compound (A) and is capable of decreasing the solubility for an organic solvent-containing developer by the action of the acid generated from the compound (B), (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern; the actinic ray-sensitive or radiation-sensitive resin composition above; a resist film using the composition.