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1,1-Difluoro-2-(3-oxocyclohexanecarbonyl)oxyethanesulfonic acid

中文名称
——
中文别名
——
英文名称
1,1-Difluoro-2-(3-oxocyclohexanecarbonyl)oxyethanesulfonic acid
英文别名
1,1-difluoro-2-(3-oxocyclohexanecarbonyl)oxyethanesulfonic acid
1,1-Difluoro-2-(3-oxocyclohexanecarbonyl)oxyethanesulfonic acid化学式
CAS
——
化学式
C9H12F2O6S
mdl
——
分子量
286.25
InChiKey
QNMKBSHAVDYQKX-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    -0.1
  • 重原子数:
    18
  • 可旋转键数:
    5
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.78
  • 拓扑面积:
    106
  • 氢给体数:
    1
  • 氢受体数:
    8

文献信息

  • Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device
    申请人:FUJIFILM Corporation
    公开号:US10802399B2
    公开(公告)日:2020-10-13
    The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having a low LWR and is further suppressed in the collapse of the formed pattern, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a photoacid generator represented by General Formula (1) or a resin having a residue obtained by removing one hydrogen atom from the photoacid generator represented by General Formula (1).
    本发明提供了一种能够形成具有低低辐射倍率的图案并进一步抑制所形成图案的塌陷的光敏或辐射敏感树脂组合物、抗蚀薄膜、图案形成方法和电子设备的制造方法。本发明的光敏或辐射敏感树脂组合物含有通式(1)表示的光酸发生体或具有从通式(1)表示的光酸发生体中除去一个原子而得到的残余物的树脂
  • METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE
    申请人:FUJIFILM CORPORATION
    公开号:US20160004157A1
    公开(公告)日:2016-01-07
    A method of forming a pattern includes (a) forming a film of an actinic-ray- or radiation-sensitive resin composition, (b) exposing the film to light, and (c) developing the exposed film with a developer comprising an organic solvent to thereby form a negative pattern. The actinic-ray- or radiation-sensitive resin composition includes (A) a resin whose solubility in the developer comprising an organic solvent is lowered when acted on by an acid, which resin contains a repeating unit with any of lactone structures of general formula (1) below, and (B) a compound that when exposed to actinic rays or radiation, generates an acid.
  • US9551931B2
    申请人:——
    公开号:US9551931B2
    公开(公告)日:2017-01-24
  • [EN] METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE<br/>[FR] PROCÉDÉ DE FORMATION D'UN MOTIF, COMPOSITION DE RÉSINE SENSIBLE AUX RAYONS ACTINIQUES OU AUX RADIATIONS, FILM SENSIBLE AUX RAYONS ACTINIQUES OU AUX RADIATIONS, PROCESSUS DE FABRICATION D'UN DISPOSITIF ÉLECTRONIQUE ET DISPOSITIF ÉLECTRONIQUE
    申请人:FUJIFILM CORP
    公开号:WO2014142360A1
    公开(公告)日:2014-09-18
    According to one embodiment, a method of forming a pattern includes (a) forming a film of an actinic-ray- or radiation-sensitive resin composition, (b) exposing the film to light, and (c) developing the exposed film with a developer comprising an organic solvent to thereby form a negative pattern. The actinic-ray- or radiation-sensitive resin composition includes (A) a resin whose solubility in the developer comprising an organic solvent is lowered when acted on by an acid, which resin contains a repeating unit with any of lactone structures of general formula (1) below, and (B) a compound that when exposed to actinic rays or radiation, generates an acid.
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