N-[difluoro-[4-(2-oxooxolan-3-yl)piperazin-1-yl]sulfonylmethyl]sulfonyl-1,1,1-trifluoromethanesulfonamide

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: N-[difluoro-[4-(2-oxooxolan-3-yl)piperazin-1-yl]sulfonylmethyl]sulfonyl-1,1,1-trifluoromethanesulfonamide
• 化学式: C₁₀H₁₄F₅N₃O₈S₃
• 分子量: 495.4
• InChiKey: UHVVSFIOJRSNPP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.2
• 重原子数：
  29
• 可旋转键数：
  6
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.9
• 拓扑面积：
  172
• 氢给体数：
  1
• 氢受体数：
  16

文献信息

• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20210356862A1

  公开（公告）日：2021-11-18

  An actinic ray-sensitive or radiation-sensitive resin composition includes a compound represented by General Formula (I) and an acid-decomposable resin. M 1 + A − -L-B − M 2 + (I)

  一种感光射线或辐射敏感的树脂组合物，包括通式（I）所表示的化合物和可酸分解树脂。M1+A−-L-B−M2+（I）
• Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank including actinic ray-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing electronic device
  申请人：FUJIFILM Corporation

  公开号：US10545405B2

  公开（公告）日：2020-01-28

  Provided are an actinic ray-sensitive or radiation-sensitive resin composition including a compound (A) whose dissolution rate in an alkali developer decreases by the action of an acid, a resin (B) having a group that decomposes by the action of an alkali developer to increase the solubility in the alkali developer and having at least one of a fluorine atom or a silicon atom, and a resin (C) having a phenolic hydroxyl group, different from the resin (B), an actinic ray-sensitive or radiation-sensitive film and a mask blank, each formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device.

  本发明提供了一种感光性或辐射敏感性树脂组合物，包括在酸的作用下在碱显影剂中的溶解度降低的化合物 (A)、具有在碱显影剂中分解以增加在碱显影剂中的溶解度的基团且至少具有一个氟原子或硅原子的树脂 (B) 以及具有与树脂 (B) 不同的酚羟基的树脂 (C)、使用感光性或辐射敏感性胶片和掩膜坯形成的感光性或辐射敏感性胶片和掩膜坯、和一种具有不同于树脂（B）的酚羟基的树脂（C），一种感光胶片或感光胶片和一种掩膜坯，它们分别使用感光胶片或感光胶片树脂组合物形成，一种使用感光胶片或感光胶片树脂组合物的图案形成方法，以及一种制造电子设备的方法。
• Developer, pattern forming method, and electronic device manufacturing method
  申请人：FUJIFILM Corporation

  公开号：US10562991B2

  公开（公告）日：2020-02-18

  Provided is a pattern forming method including the successive steps of: a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive composition; an exposure step of exposing the resist film; a step of developing the exposed resist film using a developer, and a step of rinsing the developed resist film using a rinsing liquid containing an organic solvent. The developer includes a ketone-based or ether-based solvent having a branched alkyl group. The organic solvent contained in the rinsing liquid includes an ether-based solvent having a branched alkyl group.

  本发明提供了一种图案形成方法，包括以下连续步骤：使用对放热射线或辐射敏感的组合物形成抗蚀剂薄膜的抗蚀剂薄膜形成步骤；曝光抗蚀剂薄膜的曝光步骤；使用显影剂显影曝光的抗蚀剂薄膜的步骤，以及使用含有有机溶剂的漂洗液漂洗显影的抗蚀剂薄膜的步骤。显影剂包括具有支链烷基的酮基或醚基溶剂。漂洗液中的有机溶剂包括具有支链烷基的醚基溶剂。
• Rinsing liquid, pattern forming method, and electronic device manufacturing method
  申请人：FUJIFILM Corporation

  公开号：US10599038B2

  公开（公告）日：2020-03-24

  Provided are a rinsing liquid which is used for rinsing a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition and includes a hydrocarbon-based solvent having a branched alkyl group. The hydrocarbon-based solvent having a branched alkyl group contains at least one of isodecane or isododecane.

  本发明提供了一种漂洗液，它用于漂洗从对放 射线敏感或对辐射敏感的组合物中获得的抗蚀剂薄膜，其中包括一种具有支链烷基的烃基溶 剂。具有支链烷基的烃基溶剂至少包含异癸烷或异十二烷中的一种。
• Treatment liquid and pattern forming method
  申请人：FUJIFILM Corporation

  公开号：US11042094B2

  公开（公告）日：2021-06-22

  An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern. The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having a relative dielectric constant of 4.0 or less and a second organic solvent having a relative dielectric constant of 6.0 or more.

  本发明的目的是提供一种用于抗蚀剂薄膜图案化的处理液和一种图案形成方法，每种处理液和方法都能同时抑制抗蚀剂 L/S 图案崩溃和抗蚀剂 C/H 图案遗漏故障的发生。 本发明的处理液是一种用于抗蚀剂薄膜图案化的处理液，它用于将从对放 射线敏感或对辐射敏感的树脂组合物中获得的抗蚀剂薄膜进行显影或洗涤中的 至少一种处理，并含有一种有机溶剂，其中处理液含有相对介电常数为 4.0 或以下 的第一种有机溶剂和相对介电常数为 6.0 或以上的第二种有机溶剂。