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(2-Butoxyphenyl)(methyl)sulfane | 1443310-60-8

中文名称
——
中文别名
——
英文名称
(2-Butoxyphenyl)(methyl)sulfane
英文别名
1-butoxy-2-methylsulfanylbenzene
(2-Butoxyphenyl)(methyl)sulfane化学式
CAS
1443310-60-8
化学式
C11H16OS
mdl
——
分子量
196.31
InChiKey
VATKXUHSFHBSPC-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    3.7
  • 重原子数:
    13
  • 可旋转键数:
    5
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.45
  • 拓扑面积:
    34.5
  • 氢给体数:
    0
  • 氢受体数:
    2

文献信息

  • SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING PHENYL GROUP-CONTAINING CHROMOPHORE
    申请人:NISSAN CHEMICAL INDUSTRIES, LTD.
    公开号:US20170146906A1
    公开(公告)日:2017-05-25
    The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs K.& laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1): R 1 a R 2 b Si(R 3 ) 4−(a+b) Formula (1) [where R 1 is an organic group of Formula (2): and is bonded to a silicon atom through a Si−C bond; R 3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane. A resist underlayer film obtained by applying the resist underlayer film-forming composition onto a semiconductor substrate and baking it.
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