申请人:TERUMO KABUSHIKI KAISHA
公开号:EP0333861A1
公开(公告)日:1989-09-27
An ion-selective FET sensor is obtained by covering the surface of a gate insulating film (14) of MOSFET with a conductor layer (15) composed of a layer of conductive carbon, a metal oxide such as iridium oxide or indium oxide, or a metal such as platinum, silver of palladium, covering the resulting surface with an oxidizing/reducing layer (16) and further covering the surface with an ion-selective layer. The obtained ion-selective FET sensor shows a high response speed, is scarcely affected by light, and is quite stable for a long time.
在 MOSFET 的栅极绝缘膜 (14) 表面覆盖一层由导电碳、金属氧化物(如氧化铱或氧化铟)或金属(如铂、银或钯)组成的导体层 (15),在其表面覆盖一层氧化/还原层 (16),再在其表面覆盖一层离子选择层,从而获得一种离子选择型 FET 传感器。得到的离子选择性场效应晶体管传感器响应速度快,几乎不受光的影响,而且长期稳定。