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P,P-Bis(octylphenyl) diphosphate | 73559-49-6

中文名称
——
中文别名
——
英文名称
P,P-Bis(octylphenyl) diphosphate
英文别名
bis(4-octylphenyl) phosphono phosphate
P,P-Bis(octylphenyl) diphosphate化学式
CAS
73559-49-6
化学式
C28H44O7P2
mdl
——
分子量
554.6
InChiKey
BJAGJBULYHVWTJ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    9.6
  • 重原子数:
    37
  • 可旋转键数:
    20
  • 环数:
    2.0
  • sp3杂化的碳原子比例:
    0.57
  • 拓扑面积:
    102
  • 氢给体数:
    2
  • 氢受体数:
    7

文献信息

  • Ion sensor
    申请人:TERUMO KABUSHIKI KAISHA trading as TERUMO CORPORATION
    公开号:EP0228969A2
    公开(公告)日:1987-07-15
    Disclosed is a solid-type ion sensor which does not have an internal liquid chamber. The ion sensor has a laminated structure basically includes an electrically conductive substrate, a redox layer having a redox function covering the surface of the electrically conductive substrate, and an ion-selective layer covering the surface of the redox layer. Also provided is an ion sensor of this type having an insulated thermister imbedded so as to contact the redox layer.
    本发明公开了一种没有内部液室的固体型离子传感器。该离子传感器具有层叠结构,基本上包括导电基板、覆盖在导电基板表面的具有氧化还原功能的氧化还原层以及覆盖在氧化还原层表面的离子选择层。此外,还提供了一种这种类型的离子传感器,其中嵌入了一个绝缘热敏电阻,以便与氧化还原层接触。
  • Ion-sensitive fet sensor
    申请人:TERUMO KABUSHIKI KAISHA trading as TERUMO CORPORATION
    公开号:EP0235470A2
    公开(公告)日:1987-09-09
    An ion-sensitive FET sensor has a MOSFET gate isolating membrane (13) whose surface is covered by an ion-sensitive layer (17). A redox layer (16) having a redox function is provided between the isolating membrane (14) and the ion-sensitive layer (17) to improve operating stability and speed of response. An electrically conductive layer or a combination of a thin metal film and an electrically conductive layer may be provided between the isolating membrane (14) and the redox layer (16) to further improve operating stabiality, the adhesion of the layers and the durability of the sensor. Also disclosed are optimum materials for use as an ion carrier employed in the ion-sensitive layer.
    离子敏感场效应晶体管传感器有一个 MOSFET 栅极隔离膜 (13),其表面覆盖有离子敏感层 (17)。在隔离膜 (14) 和离子敏感层 (17) 之间有一个具有氧化还原功能的氧化还原层 (16),以提高工作稳定性和响应速度。在隔离膜(14)和氧化还原层(16)之间可设置导电层或金属薄膜和导电层的组合,以进一步提高操作稳定性、层的附着力和传感器的耐用性。此外,还公开了用作离子敏感层中离子载体的最佳材料。
  • ION-SELECTIVE FET SENSOR
    申请人:TERUMO KABUSHIKI KAISHA
    公开号:EP0333861A1
    公开(公告)日:1989-09-27
    An ion-selective FET sensor is obtained by covering the surface of a gate insulating film (14) of MOSFET with a conductor layer (15) composed of a layer of conductive carbon, a metal oxide such as iridium oxide or indium oxide, or a metal such as platinum, silver of palladium, covering the resulting surface with an oxidizing/reducing layer (16) and further covering the surface with an ion-selective layer. The obtained ion-selective FET sensor shows a high response speed, is scarcely affected by light, and is quite stable for a long time.
    在 MOSFET 的栅极绝缘膜 (14) 表面覆盖一层由导电碳、金属氧化物(如氧化铱或氧化铟)或金属(如铂、银或钯)组成的导体层 (15),在其表面覆盖一层氧化/还原层 (16),再在其表面覆盖一层离子选择层,从而获得一种离子选择型 FET 传感器。得到的离子选择性场效应晶体管传感器响应速度快,几乎不受光的影响,而且长期稳定。
  • Ionic concentration measurement method
    申请人:TERUMO KABUSHIKI KAISHA trading as TERUMO CORPORATION
    公开号:EP0218530B1
    公开(公告)日:1992-09-09
  • AQUATIC PEST CONTROL DRUG
    申请人:ASAHI DENKA KOGYO KABUSHIKI KAISHA
    公开号:EP0635209B1
    公开(公告)日:2000-05-17
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