(2-methylpropan-2-yl)oxycarbonyl (2S)-2-amino-3-(4-pyrrol-1-ylphenyl)propanoate

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: (2-methylpropan-2-yl)oxycarbonyl (2S)-2-amino-3-(4-pyrrol-1-ylphenyl)propanoate
• 化学式: C₁₈H₂₂N₂O₄
• 分子量: 330.4
• InChiKey: XPXLZADMBQCRSX-HNNXBMFYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.8
• 重原子数：
  24
• 可旋转键数：
  8
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.33
• 拓扑面积：
  83.6
• 氢给体数：
  1
• 氢受体数：
  5

文献信息

• CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND
  申请人：OSAKA UNIVERSITY

  公开号：US20170052449A1

  公开（公告）日：2017-02-23

  A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).

  一种图案形成方法包括将一种化学放大型光刻胶材料制成的感光树脂组成物的预定区域图案暴露于第一种放射性射线中，该放射性射线是电离辐射或波长不大于400 nm的非电离辐射。图案化暴露的光刻胶材料膜被洪水式暴露于第二种放射性射线中，该放射性射线是波长大于图案化暴露的非电离辐射的波长和大于200 nm的非电离辐射。该化学放大型光刻胶材料包括基础组分和能够在暴露时生成辐射敏感的敏化剂和酸的生成组分。生成组分包括辐射敏感的敏化剂生成剂。辐射敏感的敏化剂生成剂包括由式(A)表示的化合物。
• Chemically amplified resist material and resist pattern-forming method
  申请人：JSR CORPORATION

  公开号：US10018911B2

  公开（公告）日：2018-07-10

  A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid-and-sensitizer generating agent or the radiation-sensitive acid generating agent included in the generative component comprises the first compound that is radiation-sensitive and second compound that is radiation-sensitive. The first compound includes a first onium cation and a first anion, and the second compound includes a second onium cation and a second anion that is different from the first anion. Each of an energy released upon reduction of the first onium cation to a radical and an energy released upon reduction of the second onium cation to a radical is less than 5.0 eV.

  一种化学放大抗蚀剂材料包括一种在酸的作用下能溶于或不溶于显影液的聚合物成分，以及一种在曝光时能产生辐射敏感敏化剂和酸的生成成分。生成组件中的辐射敏感性酸和敏化剂生成剂或辐射敏感性酸生成剂包括辐射敏感性第一化合物和辐射敏感性第二化合物。第一化合物包括第一鎓阳离子和第一阴离子，第二化合物包括第二鎓阳离子和不同于第一阴离子的第二阴离子。第一鎓阳离子还原成自由基时释放的能量和第二鎓阳离子还原成自由基时释放的能量均小于 5.0 eV。
• Resist-pattern-forming method and chemically amplified resist material
  申请人：OSAKA UNIVERSITY

  公开号：US10073348B2

  公开（公告）日：2018-09-11

  A resist-pattern-forming method comprises: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern. The resist material film is made from a photosensitive resin composition comprising a chemically amplified resist material. The chemically amplified resist material comprises a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. A van der Waals volume of the acid generated from the generative component is no less than 3.0×10−28 m3.

  一种抗蚀剂图案形成方法包括：将抗蚀剂材料薄膜的预定区域图案化，使其受到电离辐射或非电离辐射的第一种放射性射线照射；将抗蚀剂材料薄膜淹没在非电离辐射的第二种放射性射线中；烘烤抗蚀剂材料薄膜；显影抗蚀剂材料薄膜以形成抗蚀剂图案。抗蚀剂材料薄膜由包含化学放大抗蚀剂材料的感光树脂组合物制成。化学放大抗蚀剂材料包括一个能在酸的作用下溶于或不溶于显影液的碱成分和一个能在曝光时产生辐射敏感敏化剂和酸的生成成分。生成组分生成的酸的范德华体积不小于 3.0×10-28 立方米。
• Chemically amplified resist material, pattern-forming method, compound, and production method of compound
  申请人：OSAKA UNIVERSITY

  公开号：US10073349B2

  公开（公告）日：2018-09-11

  A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).

  一种图案形成方法包括将由化学放大抗蚀剂材料组成的感光树脂组合物制成的抗蚀剂材料薄膜的预定区域图案化地暴露在第一种放射性射线下，该射线是波长不大于 400 纳米的电离辐射或非电离辐射。图案化曝光的抗蚀剂材料薄膜被淹没在第二种放射性射线下，该射线为非电离辐射，其波长大于图案化曝光的非电离辐射波长，且大于 200 纳米。化学放大抗蚀剂材料包括一个碱成分和一个生成成分，后者能够在曝光时生成辐射敏感敏化剂和酸。生成成分包括辐射敏感敏化剂生成剂。辐射敏感敏化剂生成剂包括一种由式（A）表示的化合物。
• US9989849B2
  申请人：——

  公开号：US9989849B2

  公开（公告）日：2018-06-05