2,2-Bis(3-amino-3-hydroxyiminopropyl)propanedioic acid

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: 2,2-Bis(3-amino-3-hydroxyiminopropyl)propanedioic acid
• 英文别名: 2,2-bis(3-amino-3-hydroxyiminopropyl)propanedioic acid
• 化学式: C₉H₁₆N₄O₆
• 分子量: 276.25
• InChiKey: AAXOUZRCZGBAGH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.7
• 重原子数：
  19
• 可旋转键数：
  8
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.56
• 拓扑面积：
  192
• 氢给体数：
  6
• 氢受体数：
  8

文献信息

• NOVEL NITRILE AND AMIDOXIME COMPOUNDS AND METHODS OF PREPARATION
  申请人：Lee Wai Mun

  公开号：US20090111965A1

  公开（公告）日：2009-04-30

  The present application relates to semiconductor processing compositions comprising at least one compound containing at least one amidoxime functional group and to methods of using these compositions in semiconductor processing. The present application also describes the preparation of amidoximes for a semiconductor processing composition by (a) mixing a cyanoethylation catalyst, a nucleophile and an alpha-unsaturated nitrile to produce a cyanoethylation product; and (b) converting a cyano group in the cyanoethylation product into an amidoxime functional group.

  本申请涉及包含至少一个含有至少一个酰胺肟功能团的化合物的半导体加工组合物，以及使用这些组合物进行半导体加工的方法。本申请还描述了通过(a)混合氰乙基化催化剂、亲核试剂和不饱和α腈以产生氰乙基化产品；(b)将氰乙基化产品中的氰基团转化为酰胺肟功能团来制备用于半导体加工组合物的酰胺肟的方法。
• METHODS OF CLEANING SEMICONDUCTOR DEVICES AT THE BACK END OF LINE USING AMIDOXIME COMOSITIONS
  申请人：Lee Wai Mun

  公开号：US20100043823A1

  公开（公告）日：2010-02-25

  The present invention relates to aqueous compositions comprising amidoxime compounds and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The compositions of the invention may optionally contain one or more other acid compounds, one or more basic compounds, and a fluoride-containing compound and additional components such as organic solvents, chelating agents, amines, and surfactants. The invention also relates to a method of removing residue from a substrate during integrated circuit fabrication.

  本发明涉及含有酰胺肟化合物的水性组合物及其清洗半导体衬底上等离子体刻蚀残留物的方法，包括这种稀释的水性溶液。本发明的组合物可以选择性地含有一种或多种其他酸性化合物、一种或多种碱性化合物、含氟化合物和其他成分，如有机溶剂、螯合剂、胺和表面活性剂。本发明还涉及一种在集成电路制造过程中从衬底上去除残留物的方法。
• NOVEL NITRILE AND AMIDOXIME COMPOUNDS AND METHODS OF PREPARATION FOR SEMICONDUCTOR PROCESSING
  申请人：Lee Wai Mun

  公开号：US20110065622A1

  公开（公告）日：2011-03-17

  Semiconductor processing compositions comprising amidoxime compounds having two or more amidoxime functional groups and their use in semiconductor processing to remove photoresist, polymeric materials, etching residues and copper oxides from semiconductor substrates, particularly substrates comprising copper, low-k dielectric material, titanium nitride, and/or titanium oxynitride.

  半导体加工组合物包括具有两个或更多酰胺肟官能团的酰胺肟化合物，以及它们在半导体加工中的使用，以从半导体基板中去除光刻胶、聚合物材料、蚀刻残留物和氧化铜，特别是包括铜、低k介电材料、氮化钛和/或氧氮化钛的基板。
• US8062429B2
  申请人：——

  公开号：US8062429B2

  公开（公告）日：2011-11-22
• US8802609B2
  申请人：——

  公开号：US8802609B2

  公开（公告）日：2014-08-12